Specific Process Knowledge/Etch/Etching of Silicon Oxide/SiO2 etch using AOE/Standard recipe with resist mask/Striation: Difference between revisions
< Specific Process Knowledge | Etch | Etching of Silicon Oxide | SiO2 etch using AOE | Standard recipe with resist mask
Jump to navigation
Jump to search
No edit summary |
|||
Line 35: | Line 35: | ||
==Sidewall roughness effected by UV curing and heat treatment of nLof resist [[Image:section under construction.jpg|70px]]== | ==Sidewall roughness/resist surface roughness effected by UV curing and heat treatment of nLof resist [[Image:section under construction.jpg|70px]]== | ||
{| border="1" style="text-align: center; width: 320px; height: 200px;" | {| border="1" style="text-align: center; width: 320px; height: 200px;" | ||
|- | |- |
Revision as of 12:42, 18 April 2016
Feedback to this page: click here
Striation: Side wall roughness
Sidewall roughness and resist surface after etch viewed with SEM
- Striation with different resists used
Roughness of the resist after etch measured with the AFM