Specific Process Knowledge/Etch/Etching of Silicon Oxide/SiO2 etch using AOE/Standard recipe with resist mask/Striation: Difference between revisions
< Specific Process Knowledge | Etch | Etching of Silicon Oxide | SiO2 etch using AOE | Standard recipe with resist mask
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!SEM image | !SEM image | ||
|[[File:AZ0_14.jpg| | |[[File:AZ0_14.jpg|300px]] | ||
|[[File:Az1_1_09.jpg| | |[[File:Az1_1_09.jpg|300px]] | ||
|[[File:AZ2_0040.jpg| | |[[File:AZ2_0040.jpg|300px]] | ||
|[[File:az3_41.jpg| | |[[File:az3_41.jpg|300px]] | ||
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|- | |- | ||
!AFM roughness scan | !AFM roughness scan | ||
|Pre etch: cannot measure | |Pre etch: cannot measure | ||
|Ra=4.40nm, Rmax=36.5nm [[File:AZ1_4.jpg| | |Ra=4.40nm, Rmax=36.5nm [[File:AZ1_4.jpg|300px]] | ||
|Ra=3.68nm, Rmax=25.6nm [[File:AZ2_4.jpg| | |Ra=3.68nm, Rmax=25.6nm [[File:AZ2_4.jpg|300px]] | ||
|Ra=3.57nm, Rmax=28.5nm [[File:AZ3.jpg| | |Ra=3.57nm, Rmax=28.5nm [[File:AZ3.jpg|300px]] | ||
|- | |- | ||
!D | !D |
Revision as of 12:37, 18 April 2016
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Striation: Side wall roughness
Roughness of the resist after etch measured with the AFM