Specific Process Knowledge/Etch/Etching of Silicon Oxide/SiO2 etch using AOE/Standard recipe with resist mask/Striation: Difference between revisions
< Specific Process Knowledge | Etch | Etching of Silicon Oxide | SiO2 etch using AOE | Standard recipe with resist mask
Jump to navigation
Jump to search
Line 106: | Line 106: | ||
|- | |- | ||
!SEM image | !SEM image | ||
|[[File: | |[[File:AZ0_14.jpg|400px]] | ||
|[[File: | |[[File:Az1_1_09.jpg|400px]] | ||
|[[File: | |[[File:AZ2_0040.jpg|400px]] | ||
|[[File: | |[[File:az3_41.jpg|400px]] | ||
|- | |- | ||
|- | |- | ||
!AFM roughness scan | !AFM roughness scan | ||
| | |Pre etch: cannot measure | ||
|Ra= | |Ra=4.40nm, Rmax=36.5nm [[File:AZ1_4.jpg|400px]] | ||
|Ra=3. | |Ra=3.68nm, Rmax=25.6nm [[File:AZ2_4.jpg|400px]] | ||
|Ra= | |Ra=3.57nm, Rmax=28.5nm [[File:AZ3.jpg|400px]] | ||
|- | |- | ||
!D | !D |
Revision as of 10:42, 18 April 2016
Feedback to this page: click here
Striation: Side wall roughness
- Striation with different resists used
Roughness of the resist after etch measured with the AFM