Specific Process Knowledge/Etch/Etching of Silicon Oxide/SiO2 etch using AOE/Standard recipe with resist mask/Striation: Difference between revisions
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==Sidewall roughness effected by UV curing and heat treatment of AZ5214E resist [[Image:section under construction.jpg|70px]]== | ==Sidewall roughness effected by UV curing and heat treatment of AZ5214E resist [[Image:section under construction.jpg|70px]]== | ||
{| border="1" style="text-align: center; width: 320px; height: 200px;" | |||
|- | |||
|colspan="6" style="text-align: center;" style="background: #000000; color: white;" | '''AOE etch with nLof resist with different treatments''' | |||
|- | |||
!scope="row" | | |||
!|1 | |||
!|2 | |||
!|3 | |||
!|4 | |||
!|5 | |||
|- | |||
|- | |||
!Treatment | |||
|No treatment before AOE etch | |||
|No treatment after 5min AOE etch | |||
|Flood-E 70s + 1min@110dg | |||
|Flood-E 70s + 60s@110dg + 5min@150dg | |||
|- | |||
|- | |||
!SEM image | |||
|[[File:nLof0_31.jpg|300px]] | |||
|[[File:nLof1_1_27.jpg|300px]] | |||
|[[File:nLof2_0006.jpg|300px]] | |||
|[[File:nLof3_55.jpg|300px]] | |||
|- | |||
|- | |||
!AFM roughness scan | |||
|Ra=2.1nm Rmax=25.1nm [[File:nLof0 pre AOE_1_5my.jpg|300px]] | |||
|Ra=3.31nm Rmax=28.0nm [[File:nLof1_1.jpg|300px]] | |||
|Ra=3.34nm Rmax=26.8nm [[File:nLof2 pretreat1_2.jpg|300px]] | |||
|Ra=2.45nm, Rmax=19.4nm [[File:nLof3.jpg|300px]] | |||
|- | |||
!D | |||
|D1 | |||
|D2 | |||
|D3 | |||
|D4 | |||
|} |
Revision as of 10:37, 18 April 2016
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Striation: Side wall roughness
- Striation with different resists used
Roughness of the resist after etch measured with the AFM