Specific Process Knowledge/Etch/Etching of Silicon Oxide/SiO2 etch using AOE/Standard recipe with resist mask/Striation: Difference between revisions
< Specific Process Knowledge | Etch | Etching of Silicon Oxide | SiO2 etch using AOE | Standard recipe with resist mask
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!AFM roughness scan | !AFM roughness scan | ||
| | |Ra=2.1nm Rmax=25.1nm [[File:nLof0 pre AOE_1_5my.jpg|400px]] | ||
| | |Ra=3.31nm Rmax=28.0nm [[File:nLof1_1.jpg|400px]] | ||
| | |Ra=3.34nm Rmax=26.8nm [[File:nLof2 pretreat1_2.jpg|400px]] | ||
| | |Ra=2.45nm, Rmax=19.4nm [[File:nLof3.jpg|400px]] | ||
| | |Ra=2.52nm, Rmax=23.7nm [[File:nLof4.jpg|400px]] | ||
|- | |- | ||
!D | !D |
Revision as of 10:24, 18 April 2016
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Striation: Side wall roughness
- Striation with different resists used
Roughness of the resist after etch measured with the AFM