Specific Process Knowledge/Etch/III-V ICP/SiO2: Difference between revisions

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=<span style="background:#FF2800">THIS PAGE IS UNDER CONSTRUCTION</span>[[image:Under_construction.png|200px]]=
=<span style="background:#FF2800">THIS PAGE IS UNDER CONSTRUCTION</span>[[image:Under_construction.png|200px]]=
{| border="2" cellspacing="2" cellpadding="3"
|-style="background:Gray; color:White"
!Parameter
!Resist mask
|-
|Coil Power [W]
|800
|-
|Platen Power [W]
|100
|-
|Platen temperature [<sup>o</sup>C]
|0
|-
|CF<sub>4</sub> flow [sccm]
|30
|-
|H<sub>2</sub> flow [sccm]
|10
|-
|Pressure [mTorr]
|4
|-
|}
{| border="2" cellspacing="2" cellpadding="3"
|-style="background:Black; color:White"
!Results
!Test on wafer with 50% load (Travka 50), by BGHE @danchip
|-
|Etch rate of PECVD BPSG
|'''39.4nm/min (22-01-2016)'''
|-
|Selectivity to  resist [:1]
|Not known
|-
|Wafer uniformity (100mm)
|Not known
|-
|Profile [<sup>o</sup>]
|Not known
|-
|Wafer uniformity map (click on the image to view a larger image)
|Not known
|-
|SEM profile images
|NONE
|-
|Comment
|
|-
|}

Revision as of 10:44, 11 February 2016

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THIS PAGE IS UNDER CONSTRUCTION

Parameter Resist mask
Coil Power [W] 800
Platen Power [W] 100
Platen temperature [oC] 0
CF4 flow [sccm] 30
H2 flow [sccm] 10
Pressure [mTorr] 4


Results Test on wafer with 50% load (Travka 50), by BGHE @danchip
Etch rate of PECVD BPSG 39.4nm/min (22-01-2016)
Selectivity to resist [:1] Not known
Wafer uniformity (100mm) Not known
Profile [o] Not known
Wafer uniformity map (click on the image to view a larger image) Not known
SEM profile images NONE
Comment