Specific Process Knowledge/Etch/DRIE-Pegasus/StandardRecipes: Difference between revisions
Jump to navigation
Jump to search
No edit summary |
|||
Line 38: | Line 38: | ||
| | | | ||
|- | |- | ||
| | ! [[Specific Process Knowledge/Etch/DRIE-Pegasus/processC|Process C]] | ||
| Continuous | |||
| Very slow etch | |||
| 50 nm posts | |||
| Aluminum | |||
| 99.9 % on 4" wafer | |||
| | |||
| | |||
| | |||
| | |||
|- | |- | ||
! | ! [[Specific Process Knowledge/Etch/DRIE-Pegasus/processD|Process D]] | ||
| | | Bosch | ||
| | | Smooth sidewall etch | ||
| 10 µm trench | |||
| Photo resist | |||
| | | 50 % on 6" wafer | ||
| | |||
| | |||
|- | |- | ||
|} | |} |
Revision as of 17:15, 3 February 2016
Feedback to this page: click here
Overview of the standard processes: Processes A, B, C, D and SOI
The instrument was accepted on the basis of the performance of 5 processes. Below is a general comparison - to find more detailed information, go the web page for each process
Process name | Type | Purpose | Conditions during original runs | Best usage | |||
---|---|---|---|---|---|---|---|
Feature | Mask material | Etch load | Comments | ||||
Process A | Bosch | Fast etch | 80 µm trench | Photo resist | 12-13 % on 6" wafer | ||
Process B | Bosch | Fast etch | 30 µm diameter via | Photo resist | 12-13 % on 6" wafer | ||
Process C | Continuous | Very slow etch | 50 nm posts | Aluminum | 99.9 % on 4" wafer | ||
Process D | Bosch | Smooth sidewall etch | 10 µm trench | Photo resist | 50 % on 6" wafer |