Specific Process Knowledge/Etch/Etching of Silicon Oxide/SiO2 etch using AOE/Standard recipe with resist mask/Striation: Difference between revisions
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==Striation: Side wall roughness== | |||
<gallery caption="Striation with different resists used" widths="300px" heights="250px" perrow="4"> | <gallery caption="Striation with different resists used" widths="300px" heights="250px" perrow="4"> | ||
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</gallery> | </gallery> | ||
==Roughness of the resist after etch measured with the AFM== |
Revision as of 11:57, 25 November 2015
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