Specific Process Knowledge/Etch/Etching of Silicon Oxide/SiO2 etch using AOE/Standard recipe with resist mask/Etch of Al2O3: Difference between revisions
< Specific Process Knowledge | Etch | Etching of Silicon Oxide | SiO2 etch using AOE | Standard recipe with resist mask
Jump to navigation
Jump to search
(Created page with "==Etching of micro structures in Aluminum oxide== ''by Fredrik Stöhr'' Aluminum oxide (Al<sub>2</sub>O<sub>3</sub>, Alumina) can be etched with the standard recipe for silic...") |
|||
Line 1: | Line 1: | ||
==Etching of micro structures in Aluminum oxide== | ==Etching of micro structures in Aluminum oxide using the standard SiO2 recipe== | ||
''by Fredrik Stöhr'' | ''by Fredrik Stöhr'' | ||
Revision as of 11:30, 24 November 2015
Etching of micro structures in Aluminum oxide using the standard SiO2 recipe
by Fredrik Stöhr
Aluminum oxide (Al2O3, Alumina) can be etched with the standard recipe for silicon oxide etching. The parameters including the chuck temperature are identical to the recipe described above: SiO2_res. The etch is probably very physical and gives redeposition, so please consider using a Cl2 etch on the ICP metal instead (BGHE 2015-04-17)
General Description
- Process date: Summer 2014
- Aluminum Oxide with a thickness of 50 nm has been deposited by atomic layer deposition using the respective standard recipe.
- Substrates: Blank 525 µm Silicon wafers or Silicon wafers with thermally grown Silicon Oxide prior to Alumina deposition.
- Mask: [XOP8] AZ5214E 1.5 µm thick (HMDS pretreatment, 6-inch aligner 3 sec exposure, 60 sec development).
- Etch Load (Total Exposed SiO2): ~ 5 %
- Post process: O2 Plasma Ashing 10 min