Specific Process Knowledge/Characterization/SEM LEO: Difference between revisions

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*[[/SEM comparison tablel|SEM comparison table]]
*[[/SEM comparison tablel|SEM comparison table]]




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!colspan="2" border="none" style="background:silver; color:black;" align="center"|Equipment  
!colspan="2" border="none" style="background:silver; color:black;" align="center"|Equipment  
|style="background:WhiteSmoke; color:black"|<b>ALD Picosun R200</b>
|style="background:WhiteSmoke; color:black"|<b>SEM LEO (Leo 1550 SEM)</b>
|-
|-
!style="background:silver; color:black;" align="center" width="60"|Purpose  
!style="background:silver; color:black;" align="center" width="60"|Purpose  
|style="background:LightGrey; color:black"|ALD (atomic layer deposition) of
|style="background:LightGrey; color:black"|Imaging and measurement of
|style="background:WhiteSmoke; color:black"|
*Any (semi)conducting sample that may have thin (> ~ 5 µm) layers of non-conducting materials on top
|-
!style="background:silver; color:black;" align="center" width="60"|Location
|style="background:LightGrey; color:black"|
|style="background:WhiteSmoke; color:black"|
*Cleanroom of DTU Danchip
|-
!style="background:silver; color:black;" align="center" width="60"|Performance
|style="background:LightGrey; color:black"|Resolution
|style="background:WhiteSmoke; color:black"|
*~ 5 nanometers (limited by vibrations)
The resolution is strongly dependent on the type of sample and the skills of the operator.
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="5"|Instrument specifics
|style="background:LightGrey; color:black"|Detectors
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Al<sub>2</sub>O<sub>3</sub>
*Secondary electron (Se2)
*TiO<sub>2</sub>
*Inlens secondary electron (Inlens)
*Pt (not tested yet)
*Backscatter electron (BSD)
Please note that it might not be possible to deposit all marials at the same time
|-
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Performance
|style="background:LightGrey; color:black"|Stage
|style="background:LightGrey; color:black"|Deposition rates
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Al<sub>2</sub>O<sub>3</sub>: ~ 0.88 - 0.97 nm/cycle (Using the "Al2O3" recipe, depending of the temperature)
*X, Y: 125 × 100 mm
*TiO<sub>2</sub>: Not measured
*T: 0 to 90o
*Pt: Not measured
*R: 360o
*Z: 48 mm
|-
|-
|style="background:LightGrey; color:black"|Thickness
|style="background:LightGrey; color:black"|Electron source
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Al<sub>2</sub>O<sub>3</sub>: 0 - 100 nm
*FEG (Field Emission Gun) source
*TiO<sub>2</sub>: 0 - 100 nm
*Pt: ?
|-
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Process parameter range
|style="background:LightGrey; color:black"|Operating pressures
|style="background:LightGrey; color:black"|Temperature
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Al<sub>2</sub>O<sub>3</sub>: 150 - 350 <sup>o</sup>C
*Fixed at High vacuum (2 × 10-5mbar - 10-6mbar)
*TiO<sub>2</sub>: ?
*Pt: ?
|-
|-
|style="background:LightGrey; color:black"|Precursors
|style="background:LightGrey; color:black"|Options
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*TMA
*Raith Elphy Quantum E-Beam Litography system
*TiCl<sub>4</sub>
*H<sub>2</sub>O
*O<sub>3</sub>
*O<sub>2</sub>
*MeCpPtMe<sub>3</sub> (not mounted yet)
Please note that not all precursors might be mounted on the tool at the same time
|-
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
|style="background:LightGrey; color:black"|Batch size
|style="background:LightGrey; color:black"|Batch size
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*1-5 100 mm wafers
*1 100 mm wafer
*1-5 150 mm wafers
*1 150 mm wafer (not full view)
*Several smaller samples  
*Smaller samples  
|-
|-
| style="background:LightGrey; color:black"|Allowed materials
| style="background:LightGrey; color:black"|Allowed materials
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Silicon
*Any standard cleanroom materials.
*Silicon oxide, silicon nitride
Use dedicated samples holders for samples from Black Magic PECVD
*Quartz/fused silica
*Al, Al<sub>2</sub>O<sub>3</sub>
*Ti, TiO<sub>2</sub>
*Other metals (use dedicated carrier wafer)
*III-V materials (use dedicated carrier wafer)
*Polymers (depending on the melting point/deposition temperature, use carrier wafer)
|-  
|-  
|}
|}

Revision as of 15:40, 9 November 2015

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SEM LEO

Picosun R200 ALD, positioned in cleanroom F-2.

A Danchip there are five scanning electron microscopes (SEMs). These SEMs cover a wide range of needs both in the cleanroom and outside: From the fast in-process verification of different process parameters such as etch rates, step coverages or lift-off quality to the ultra high resolution images on any type of sample intended for publication.

The SEM LEO was installed in the cleanroom in the 1998, and the software was ungraded in 2012.

This SEM will cover most users need. It is a very reliable and rugged instrument that provides high quality images of most samples. Excellent images on a large variety of materials such as semiconductors, semiconductor oxides or nitrides, metals, thin films and some polymers may be acquired on the SEM.

The SEM is is equipped with a Raith e-beam writing system. This system requires a special training.


The user manual, control instruction, the user APV and contact information can be found in LabManager:

SEM LEO info page in LabManager,


Performance information


Equipment performance and process related parameters

Equipment SEM LEO (Leo 1550 SEM)
Purpose Imaging and measurement of
  • Any (semi)conducting sample that may have thin (> ~ 5 µm) layers of non-conducting materials on top
Location
  • Cleanroom of DTU Danchip
Performance Resolution
  • ~ 5 nanometers (limited by vibrations)

The resolution is strongly dependent on the type of sample and the skills of the operator.

Instrument specifics Detectors
  • Secondary electron (Se2)
  • Inlens secondary electron (Inlens)
  • Backscatter electron (BSD)
Stage
  • X, Y: 125 × 100 mm
  • T: 0 to 90o
  • R: 360o
  • Z: 48 mm
Electron source
  • FEG (Field Emission Gun) source
Operating pressures
  • Fixed at High vacuum (2 × 10-5mbar - 10-6mbar)
Options
  • Raith Elphy Quantum E-Beam Litography system
Substrates Batch size
  • 1 100 mm wafer
  • 1 150 mm wafer (not full view)
  • Smaller samples
Allowed materials
  • Any standard cleanroom materials.

Use dedicated samples holders for samples from Black Magic PECVD

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