Specific Process Knowledge/Lithography/Baking

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Comparing baking methods

	Hotplate: 90-110C	Hotplate 1 (SU8) and 2	Oven 90C	Oven: 110C - 250C	Oven 250C
Purpose	Programmable contact bake Soft bake PEB	Programmable, ramped contact bake Soft bake of SU-8 PEB of SU-8	Manual convection bake Soft bake	Manual convection bake Hard bake Post-exposure bake	Manual convection bake Dehydration
Temperature	Maximum 120°C	Maximum 110°C	Fixed at 90°C	110 - 250°C Return to 110°C after use	Fixed at 250°C
Substrate size	50 mm wafer 100 mm wafer 150 mm wafer	pieces 50 mm wafers 100 mm wafers 150 mm wafer 200 mm wafer	100 mm wafers 150 mm wafers	100 mm wafers 150 mm wafers	100 mm wafers 150 mm wafers
Allowed materials	All substrates Film or pattern of all types	Silicon, glass, and polymer substrates Film or pattern of all types except type IV	Silicon, glass, and polymer substrates Film or pattern of all types	Silicon, glass, and high Tg polymer substrates Film or pattern of all types	Silicon, glass, and high Tg polymer substrates Film or pattern of all types except resist
Restrictions (Not allowed)		III-V, copper, steel substrates Pb, Te films	III-V, copper, steel substrates	III-V, low Tg polymer, copper, steel substrates	III-V, low Tg polymer, copper, steel substrates Resist is not allowed

Hotplates

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Hotplate: 90-110C

Location of Hotplate: 90-110C in C-1

Hotplate: 90-110C is used for baking of 2" - 6" wafers. Do not exceed 120°C.

The user manual, and contact information can be found in LabManager: Hotplate: 90-110C

Hotplate 1 (SU8) and Hotplate 2 (SU8)

Hotplate 1 (SU8) and Hotplate 2 (SU8) situated in C-1

We have two dedicated SU-8 hotplates in C-1.

Users can control the ramp-time, the baking temperature, and the baking time. In order to avoid thermal curing of SU-8 residues on the hotplates, they are temperature limited to 110°C.

The user manual, and contact information can be found in LabManager: Hotplate 1 (SU8) Hotplate 2 (SU8)

Ovens

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Oven 90C

Oven 90C situated in C-1

The oven is mostly used for baking of several wafers at a time at 90 °C as a soft baking step after a spin coating of photoresist. For 1.5µm resist the baking time is 30 min. For most of the other resist thicknesses it is also 30 min.

The user manual, and contact information can be found in LabManager: Oven 90C

Oven: 110C - 250C

Oven: 110C - 250C situated in C-1

Variable temperature convection oven mostly used for baking of wafers as a hard baking step after development of photoresist.

The set-point can be varied, but should always be returned to 110°C after use.

The user manual, and contact information can be found in LabManager: Oven: 110C - 250C

Oven 250C for pretreatment

Oven 250C for pretreatment situated in C-1

See Oven 250C