Specific Process Knowledge/Etch/AOE (Advanced Oxide Etch)/Silicon Nitride Etch using AOE/Nitride etch with DUV mask: Difference between revisions

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=<span style="background:#FF2800">THIS PAGE IS UNDER CONSTRUCTION</span>[[image:Under_construction.png|200px]]=  
=<span style="background:#FF2800">THIS PAGE IS UNDER CONSTRUCTION</span>[[image:Under_construction.png|200px]]=  


<gallery caption="Some chemicals of the MVD and the surface reaction" widths="200px" heights="150px" perrow="3">
<gallery caption="Etch of LPCVD nitride with DUV KRF resist as mask. The mask is still on" widths="300px" heights="250px" perrow="3">
image:DUV_sin_01_2min17.jpg|Different chemicals for the MVD.
image:DUV_sin_01_2min17.jpg|Profile of lines with 1µm pitch
image:DUV_sin_01_2min19.jpg|The chemical reaction in which the Cl atoms of the precursors are eliminated under formation of HCl.
image:DUV_sin_01_2min19.jpg|Profile of lines with 3µm pitch
image:DUV_sin_01_2min20.jpg|
image:DUV_sin_01_2min20.jpg|Profile of line - zoom in on 3µm pitch
</gallery>
</gallery>

Revision as of 13:50, 16 October 2015

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THIS PAGE IS UNDER CONSTRUCTIONUnder construction.png

  • Etch of LPCVD nitride with DUV KRF resist as mask. The mask is still on

  • Profile of lines with 1µm pitch

  • Profile of lines with 3µm pitch

  • Profile of line - zoom in on 3µm pitch

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