Specific Process Knowledge/Etch/DRIE-Pegasus/showerheadchange: Difference between revisions

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! width="100" | Key words
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! rowspan="6" | Polysilicon etch    <!-- recipe name -->
! rowspan="6" | Polysilicon etch    <!-- recipe name -->
! Original -      <!-- step -->
! Original   <!-- step -->
| 30      <!-- chiller temp -->
| 30      <!-- chiller temp -->
! 2.3      <!-- dep time -->
! 2.3      <!-- dep time -->

Revision as of 11:07, 11 December 2014

Comparison of continuous processes

Process Before After
Name/Type Description Wafer ID Comment SEM images Wafer ID Comment SEM images
Continuous black silicon recipe on blank wafer 15 mins, -10 degrees, 32 mtorr, 60 sccm SF6, 55 sccm O2, 70 W platen S004592 Wafer centre S004592 centre.jpg S004679 Wafer centre S004679 centre.jpg
S004592 Wafer edge S004592 edge.jpg S004679 Wafer edge S004679 edge.jpg
Switched etch of 1.8 µm polysilicon on BOX patterned with DUV 50 cycles, 30 degrees, 2.3/5 secs, 10/10 mtorr, 0/60 sccm SF6, 0/5 sccm O2, 50/20 sccm C4F8, 600/400 W coil, 0/40 W platen S004593 6" wafer S00459305.jpg S00459306.jpg S00459307.jpg

S00459308.jpg S004593-01.jpg S004593-02.jpg

S004593-03.jpg S004593-04.jpg

S004679 Wafer centre S004679 centre.jpg
S004593 Wafer edge S004592 edge.jpg S004679 Wafer edge S004679 edge.jpg


Comparison of switched processes

Recipe description Name Temp. Deposition step Etch step Process observations
Time Pres. C4F8 SF6 O2 Coil Time Pres. C4F8 SF6 O2 Coil Platen Hardware Runs Key words
Polysilicon etch Original 30 2.3 10 50 0 0 600 5.0 10 20 60 5 400 40 - 1
Cpoly1 30 1.2 10 50 0 0 600 5.0 10 20 60 5 400 40 - 1
Cpoly2 30 1.4 10 50 0 0 600 5.0 10 20 60 5 400 40 - 1
Cpoly3 30 1.6 10 50 0 0 600 5.0 10 20 60 5 400 40 - 1
Cpoly4 30 1.8 10 50 0 0 600 5.0 10 20 60 5 400 40 - 1
Cpoly5 30 2.0 10 50 0 0 600 5.0 10 20 60 5 400 40 - 1