Specific Process Knowledge/Etch/DRIE-Pegasus/showerheadchange: Difference between revisions

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{| border="1" cellpadding="1" cellspacing="0" style="text-align:center;"
|+ '''Switched etch of 1.8 µm polysilicon on BOX patterned with DUV'''
|-
! rowspan="2" width="100"| Recipe
! rowspan="2" width="20"| Step
! rowspan="2" width="20"| Temp.
! colspan="6" | Deposition step
! colspan="7" | Etch step
! colspan="3" | Process observations
|-
! Time
! Pres.
! C<sub>4</sub>F<sub>8</sub>
! SF<sub>6</sub>
! O<sub>2</sub>
! Coil
! Time
! Pres.
! C<sub>4</sub>F<sub>8</sub>
! SF<sub>6</sub>
! O<sub>2</sub>
! Coil
| [[Main Page/Process Logs/jmli/Parameters#Platen power|Platen]]
| [[Main Page/Process Logs/jmli/Parameters#Hardware | HW]]
! Runs
! width="100" | Key words
|-
! -  <!-- recipe name -->
|        <!-- step -->
|        <!-- chiller temp -->
|        <!-- dep time -->
|        <!-- dep pressure -->
|        <!-- C4F8 flow -->
|        <!-- SF6 flow -->
|        <!-- O2 flow -->
|        <!-- coil power -->
|        <!-- etch time -->
|        <!-- etch pressure -->
|        <!-- C4F8 flow -->
|        <!-- SF6 flow -->
|        <!-- O2 flow -->
|        <!-- coil power -->
|        <!-- platen power -->
|        <!-- hardware setting -->
|      <!-- link processes -->
|      <!-- keywords -->
|-
! base-A    <!-- recipe name -->
| -      <!-- step -->
| 30      <!-- chiller temp -->
! 2.3      <!-- dep time -->
| 10      <!-- dep pressure -->
| 50      <!-- C4F8 flow -->
| 0      <!-- SF6 flow -->
| 0    <!-- O2 flow -->
| 600      <!-- coil power -->
| 5.0      <!-- etch time -->
| 10      <!-- etch pressure -->
| 20      <!-- C4F8 flow -->
| 60      <!-- SF6 flow -->
| 5      <!-- O2 flow -->
| 400      <!-- coil power -->
| 40      <!-- platen power -->
| -      <!-- hardware setting -->
| [[Main Page/Process Logs/jmli/Pegasus/poly/base-A | 1]]      <!-- link processes -->
|    <!-- keywords -->
|-
! base-B    <!-- recipe name -->
| -      <!-- step -->
| 30      <!-- chiller temp -->
! 2.15      <!-- dep time -->
| 10      <!-- dep pressure -->
| 50      <!-- C4F8 flow -->
| 0      <!-- SF6 flow -->
| 0    <!-- O2 flow -->
| 600      <!-- coil power -->
| 5.0      <!-- etch time -->
| 10      <!-- etch pressure -->
| 20      <!-- C4F8 flow -->
| 60      <!-- SF6 flow -->
| 5      <!-- O2 flow -->
| 400      <!-- coil power -->
| 40      <!-- platen power -->
| -      <!-- hardware setting -->
| [[Main Page/Process Logs/jmli/Pegasus/poly/base-B | 1]]      <!-- link processes -->
|    <!-- keywords -->
|-
! base-C    <!-- recipe name -->
| -      <!-- step -->
| 30      <!-- chiller temp -->
! 2.15      <!-- dep time -->
| 10      <!-- dep pressure -->
| 50      <!-- C4F8 flow -->
| 0      <!-- SF6 flow -->
| 0    <!-- O2 flow -->
| 600      <!-- coil power -->
| 5.0      <!-- etch time -->
| 10      <!-- etch pressure -->
| 20      <!-- C4F8 flow -->
| 60      <!-- SF6 flow -->
| 5      <!-- O2 flow -->
| 400      <!-- coil power -->
| 40      <!-- platen power -->
| -      <!-- hardware setting -->
| [[Main Page/Process Logs/jmli/Pegasus/poly/base-B | 1]]      <!-- link processes -->
|    <!-- keywords -->
|-
|}
|}

Revision as of 15:51, 10 December 2014

Comparison of processes before and after the change of showerhead in December 2014
Process Before After
Name/Type Description Wafer ID Comment SEM images Wafer ID Comment SEM images
Continuous black silicon recipe on blank wafer 15 mins, -10 degrees, 32 mtorr, 60 sccm SF6, 55 sccm O2, 70 W platen S004592 Wafer centre S004592 centre.jpg S004679 Wafer centre S004679 centre.jpg
S004592 Wafer edge S004592 edge.jpg S004679 Wafer edge S004679 edge.jpg
Switched etch of 1.8 µm polysilicon on BOX patterned with DUV 50 cycles, 30 degrees, 2.3/5 secs, 10/10 mtorr, 0/60 sccm SF6, 0/5 sccm O2, 50/20 sccm C4F8, 600/400 W coil, 0/40 W platen S004593 6" wafer S00459305.jpg S00459306.jpg S00459307.jpg

S00459308.jpg S004593-01.jpg S004593-02.jpg

S004593-03.jpg S004593-04.jpg

S004679 Wafer centre S004679 centre.jpg
S004593 Wafer edge S004592 edge.jpg S004679 Wafer edge S004679 edge.jpg



Switched etch of 1.8 µm polysilicon on BOX patterned with DUV
Recipe Step Temp. Deposition step Etch step Process observations
Time Pres. C4F8 SF6 O2 Coil Time Pres. C4F8 SF6 O2 Coil Platen HW Runs Key words
-
base-A - 30 2.3 10 50 0 0 600 5.0 10 20 60 5 400 40 - 1
base-B - 30 2.15 10 50 0 0 600 5.0 10 20 60 5 400 40 - 1
base-C - 30 2.15 10 50 0 0 600 5.0 10 20 60 5 400 40 - 1
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