Specific Process Knowledge/Etch/DRIE-Pegasus/showerheadchange: Difference between revisions

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| [[file:S004679 edge.jpg |250px|frameless ]]
| [[file:S004679 edge.jpg |250px|frameless ]]
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! rowspan="2" width="100"| Switched polysilicon etch on DUV wafer, (D/E) indicate Dep and Etch
 
| rowspan="2" width="100"| 50 cycles, 30 degrees,  2.3/5 secs, 10/10 mtorr, 0/60 sccm SF<sub>6</sub>, 0/5 sccm O<sub>2</sub>, 50/20 sccm C<sub>4</sub>F<sub>8</sub>, 600/400 W coil, 0/40 W platen
 
{| border="1" cellpadding="1" cellspacing="1" style="text-align:center;"
|+ '''Comparison of processes before and after the change of showerhead in December 2014'''
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! rowspan="2"| Process
! colspan="3"| Before
! colspan="3"| After
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! Wafer ID
! Comment
! SEM images
! Wafer ID
! Comment
! SEM images
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! rowspan="2" width="100"| 15 minutes of black silicon recipe on blank wafer
| S004592
| S004592
| Wafer centre
| Wafer centre

Revision as of 15:19, 10 December 2014

Comparison of processes before and after the change of showerhead in December 2014
Process Before After
Name/Type Description Wafer ID Comment SEM images Wafer ID Comment SEM images
Continuous black silicon recipe on blank wafer 15 mins, -10 degrees, 32 mtorr, 60 sccm SF6, 55 sccm O2, 70 W platen S004592 Wafer centre S004592 centre.jpg S004679 Wafer centre S004679 centre.jpg
S004592 Wafer edge S004592 edge.jpg S004679 Wafer edge S004679 edge.jpg
Switched polysilicon etch on DUV wafer, (D/E) indicate Dep and Etch 50 cycles, 30 degrees, 2.3/5 secs, 10/10 mtorr, 0/60 sccm SF6, 0/5 sccm O2, 50/20 sccm C4F8, 600/400 W coil, 0/40 W platen S004592 Wafer centre S004592 centre.jpg S004679 Wafer centre S004679 centre.jpg
S004592 Wafer edge S004592 edge.jpg S004679 Wafer edge S004679 edge.jpg