Specific Process Knowledge/Etch/Etching of Silicon Nitride/Etch of Silicon Nitride using RIE: Difference between revisions
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===Expected result using the above RIE recipes for etching of silicon nitride:=== | ===Expected result using the above RIE recipes for etching of silicon nitride:=== | ||
You should be aware that the result can deviate quit a lot from what is written here depending on ex. the mask loading. | You should be aware that the result can deviate quit a lot from what is written here depending on ex. the mask loading. | ||
{| border=" | {| border="2" cellspacing="0" cellpadding="8" | ||
!Name | !Name | ||
!Tested with mask load: | !Tested with mask load: |
Revision as of 14:30, 31 January 2008
For a general introduction to RIE at Danchip see RIE (Reactive Ion Etch)
Etching of silicon nitride using RIE can be done with several recipes. It can be etched by our standard silicon etch recipe: OH_PolyA which is based on SF6. It can also be etched using the recipe 1Nitride which is based on CHF3. The difference of these two etches has not been investigate in details. Look in the table below to see what we know
Some RIE recipes for etching of silicon nitride:
Name | SF6 flow | O2 flow | CHF3 flow | N2 flow | Pressure | Power |
---|---|---|---|---|---|---|
OH_PolyA | 32 sccm | 8 sccm | 80 mTorr | 30 W | ||
BGE-NITR | 8 sccm | 32 sccm | 38 mTorr | 50 W |
Expected result using the above RIE recipes for etching of silicon nitride:
You should be aware that the result can deviate quit a lot from what is written here depending on ex. the mask loading.
Name | Tested with mask load: | Etch rate | Anisotropy | Selectivity to resist | Selectivity to oxide | Selectivity to silicon | Comments |
---|---|---|---|---|---|---|---|
OH_PolyA | 10-20% | 0.05 µm/min | ? | ~1:1 | ~1:2-3 | ~1:13 | |
BGE-NITR | 10-20% | 0.04 µm/min | Expected to be very anisotropic - not verified | ? | ~1:1 | ~1:1 | Especially good to remove nitride on one side of the wafer avoiding getting anything etched on the back side. |