Specific Process Knowledge/Etch/Etching of Chromium: Difference between revisions

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! Chromium etch 2
! Chromium etch 2
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|General description
!General description
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Etch of chromium
Etch of chromium
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Etch of chromium
Etch of chromium
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|Chemical solution
!Chemical solution
|HNO<math>_3</math>:H<math>_2</math>O:cerisulphate  - 90ml:1200ml:15g
|HNO<math>_3</math>:H<math>_2</math>O:cerisulphate  - 90ml:1200ml:15g
|Commercial chromium etch
|Commercial chromium etch
CE 8002-A
CE 8002-A
|-
|-
|Process temperature
!Process temperature
|Room temperature
|Room temperature


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|Possible masking materials:
!Possible masking materials:
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Photoresist (1.5 µm AZ5214E)
Photoresist (1.5 µm AZ5214E)
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~10-20 nm/min
~10-20 nm/min
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|Batch size
!Batch size
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1-25 wafers at a time
1-25 wafers at a time
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4" wafers
4" wafers
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|Allowed materials
!Allowed materials
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No restrictions.
No restrictions.

Revision as of 13:54, 31 January 2008

Etching of Chromium

Etching of chromium is done wet at Danchip making your own set up in a beaker in a fume hood - preferably in cleanroom 2 or 4. We have two solution for this:

  1. HNO:HO:cerisulphate - 90ml:1200ml:15g - standard at Danchip
  2. Commercial chromium etch

Etch rate are depending on the level of oxidation of the metal.


Chromium etch 1 Chromium etch 2
General description

Etch of chromium

Etch of chromium

Chemical solution HNO:HO:cerisulphate - 90ml:1200ml:15g Commercial chromium etch

CE 8002-A

Process temperature Room temperature Room temperature
Possible masking materials:

Photoresist (1.5 µm AZ5214E)

Photoresist (1.5 µm AZ5214E)

Etch rate

~40-100 nm/min

~10-20 nm/min

Batch size

1-25 wafers at a time

1-25 wafer at a time

Size of substrate

4" wafers

4" wafers

Allowed materials

No restrictions. Make a note on the beaker of which materials have been processed.

No restrictions. Make a note on the beaker of which materials have been processed.