Specific Process Knowledge/Doping: Difference between revisions

From LabAdviser
Jump to navigation Jump to search
(Created page with "=<span style="background:#FF2800">THIS PAGE IS UNDER CONSTRUCTION</span>200px= '''Feedback to this page''': '''[mailto:labadviser@danchip.dt...")
 
Line 6: Line 6:
<br clear="all" />
<br clear="all" />


== Name of process ==
== Doping your wafer ==


Write a short description of the process and how to perform the process.
This page is about doping your wafer or making a thin film layer doped with boron, phosphor or Germane.


*[[/Deposition of silicon nitride using LPCVD|Process description using method 1]]
*[[/Deposition of silicon nitride using LPCVD|Process description using method 1]]

Revision as of 08:57, 1 July 2014

THIS PAGE IS UNDER CONSTRUCTIONUnder construction.png

Feedback to this page: click here


Doping your wafer

This page is about doping your wafer or making a thin film layer doped with boron, phosphor or Germane.


Comparison method 1 and method 2 for the process

Method 1 Method 2
Generel description Generel description - method 1 Generel description - method 2
Parameter 1
  • A
  • B
  • A
  • B
Parameter 2
  • A
  • B
  • C
  • A
Substrate size
  • # small samples
  • # 50 mm wafers
  • # 100 mm wafers
  • # 150 mm wafers
  • # small samples
  • # 50 mm wafers
  • # 100 mm wafers
  • # 150 mm wafers
Allowed materials
  • Allowed material 1
  • Allowed material 2
  • Allowed material 1
  • Allowed material 2
  • Allowed material 3