Specific Process Knowledge/Thin film deposition/Deposition of Tungsten: Difference between revisions
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{| border="1" cellspacing="0" cellpadding="4" | {| border="1" cellspacing="0" cellpadding="4" | ||
! | |-style="background:silver; color:black" | ||
! | |||
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Alcatel|Alcatel]]) | ! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Alcatel|Alcatel]]) | ||
|- | |- | ||
| Batch size | |-style="background:WhiteSmoke; color:black" | ||
! Batch size | |||
| | | | ||
*Up to 1x4" wafers | *Up to 1x4" wafers | ||
*smaller pieces | *smaller pieces | ||
|- | |- | ||
| Pre-clean | |-style="background:Lightgrey; color:black" | ||
! Pre-clean | |||
|RF Ar clean | |RF Ar clean | ||
|- | |- | ||
| Layer thickness | |||
|10Å to 5000Å | |-style="background:WhiteSmoke; color:black" | ||
! Layer thickness | |||
|10Å to 5000Å* | |||
|- | |- | ||
| Deposition rate | |||
|-style="background:Lightgrey; color:black" | |||
! Deposition rate | |||
|2Å/s to 15Å/s | |2Å/s to 15Å/s | ||
|- | |- | ||
|-style="background:WhiteSmoke; color:black" | |-style="background:WhiteSmoke; color:black" | ||
!Allowed materials | ! Allowed materials | ||
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|-style="background:Lightgrey; color:black" | |-style="background:Lightgrey; color:black" | ||
!Comments | ! Comments | ||
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|} | |} | ||
'''*''' ''For thicknesses above 200 nm permission is required'' | |||
Revision as of 10:12, 10 March 2014
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Tungsten (W) can be deposited by e-beam evaporation. In the chart below you can compare the different deposition equipment.
| E-beam evaporation (Alcatel) | |
|---|---|
| Batch size |
|
| Pre-clean | RF Ar clean |
| Layer thickness | 10Å to 5000Å* |
| Deposition rate | 2Å/s to 15Å/s |
| Allowed materials |
|
| Comments |
* For thicknesses above 200 nm permission is required