Specific Process Knowledge/Etch/Wet Chromium Etch: Difference between revisions

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==Wet etching of Chromium==
==Wet etching of Chromium==
[[Image:fumehoodetch-chrom.jpg|300x300px|thumb|Fume hood: positioned in cleanroom 2. <br />Wet Etch of Chromium can take place in a beaker in this fume hood]]
[[Image:Stinkskab RR2.jpg|300x300px|thumb|Fume hood in cleanroom 2. <br />Wet Etch of Chromium can take place in a beaker in this fume hood]]
Wet etching of chromium at Danchip is done making your own set up in a beaker in a fume hood - preferably in cleanroom 2 or 4. You can see the APV [http://www.labmanager.danchip.dtu.dk/d4Show.php?id=2479&mach=146 here].
Wet etching of chromium at Danchip is done making your own set up in a beaker in a fume hood - preferably in cleanroom 2 or 4. You can see the APV [http://www.labmanager.danchip.dtu.dk/d4Show.php?id=2479&mach=146 here].



Revision as of 12:17, 13 September 2013

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Wet etching of Chromium

Fume hood in cleanroom 2.
Wet Etch of Chromium can take place in a beaker in this fume hood

Wet etching of chromium at Danchip is done making your own set up in a beaker in a fume hood - preferably in cleanroom 2 or 4. You can see the APV here.

We have two solutions for this:

  1. Commercial chromium etch (Chrome Etch 18). You can see the KBA here
  2. HNO3:H2O:cerisulphate - 90ml:1200ml:15g

Etch rate are depending on the level of oxidation of the metal.

How to mix the Chromium etch 2:

  1. Take a beaker and add 15g of cerisulphate.
  2. Add a little water while stirring - make sure all lumps are gone.
  3. Add water until 600 ml - keep stirring (use magnetic stirring)
  4. Add 90 ml HNO3
  5. When the cerisulphate is completely dissolved (clear liquid) you can add the other 600 ml of wafer.



Comparing the two wet chromium etches

Chromium etch 1 Chromium etch 2
General description

Etch of chromium

Etch of chromium

Link to safety APV and KBA see APV here.

see KBA here

see APV here
Chemical solution Chrome Etch 18 HNO3:H2O:cerisulphate - 90ml:1200ml:15g
Process temperature Room temperature Room Temperature
Possible masking materials Photoresist (1.5 µm AZ5214E) Photoresist (1.5 µm AZ5214E)
Etch rate ~ ? nm/min ~40-100 nm/min
Batch size 1-7 4" wafers at a time 1-7 4" wafers at a time
Size of substrate Any size and number that can go inside the beaker in use Any size and number that can go inside the beaker in use
Allowed materials No restrictions.

Make a note on the beaker of which materials have been processed.

No restrictions.

Make a note on the beaker of which materials have been processed.