Specific Process Knowledge/Etch/Wet Platinum Etch: Difference between revisions

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(Created page with "Ething of Platin can be done either wet or dry. For wet etching please see below on this page. Dry etching can be done with [[Specific Process Knowledge/Etch/IBE/IBSD Ionfab 3...")
 
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Ething of Platin can be done either wet or dry. For wet etching please see below on this page. Dry etching can be done with [[Specific Process Knowledge/Etch/IBE/IBSD Ionfab 300|IBE]] by sputtering with Ar ions.  
Ething of Platinum can be done either wet or dry. For wet etching please see below on this page. Dry etching can be done with [[Specific Process Knowledge/Etch/IBE/IBSD Ionfab 300|IBE]] by sputtering with Ar ions.  




Platin can be etched by the following wet etch:
Platinum can be etched by the following wet etch:


*HCl:HNO3:H2O  7:1:8 at 85 °C
*HCl : HNO<sub>3</sub> : H<sub>2</sub>O        (7 : 1 : 8) at 85 °C


At this moment we do not have any information on the etch rate. You should be aware that this wet etch will also etch gold and it is not possible to use any masking material, it is used as a stripper.
At this moment we do not have any information on the etch rate. You should be aware that this wet etch will also etch gold and it is not possible to use any masking material, it is used as a stripper.
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Use the fumehood in cleanroom 2 for the setup. Use a glass beaker.
Use the fumehood in cleanroom 2 for the setup. Use a glass beaker.
Write content on beaker and which metals has been etched with yellow permanent pen.
Write content on beaker and which metals has been etched with yellow permanent pen.
===PolySi Etch data===
{|border="1" cellspacing="1" cellpadding="3" style="text-align:left;"
|-
|-style="background:silver; color:black"
!
! Platinum wet etch
|-
|-style="background:WhiteSmoke; color:black"
!General description
|
Etch of Platinum
|-
|-style="background:LightGrey; color:black"
!Link to safety APV
|[http://labmanager.danchip.dtu.dk/d4Show.php?id=2479&mach=146 see APV here]. 
|-
|-style="background:WhiteSmoke; color:black"
!Chemical solution
|HCl : HNO<sub>3</sub> : H<sub>2</sub>O    (7 : 1 : 8)
|-
|-style="background:LightGrey; color:black"
!Process temperature
|85 °C
|-
|-style="background:WhiteSmoke; color:black"
!Possible masking materials
|None
|-
|-style="background:LightGrey; color:black"
!Etch rate
| Mainly used as stripper
|-
|-style="background:WhiteSmoke; color:black"
!Batch size
|
1-7 4" wafers at a time
|-
|-style="background:LightGrey; color:black"
!Size of substrate
|
Any that fits into a carrier that can go into the glass beaker
|-
|}

Revision as of 12:05, 5 September 2013

Ething of Platinum can be done either wet or dry. For wet etching please see below on this page. Dry etching can be done with IBE by sputtering with Ar ions.


Platinum can be etched by the following wet etch:

  • HCl : HNO3 : H2O (7 : 1 : 8) at 85 °C

At this moment we do not have any information on the etch rate. You should be aware that this wet etch will also etch gold and it is not possible to use any masking material, it is used as a stripper.

Use the fumehood in cleanroom 2 for the setup. Use a glass beaker. Write content on beaker and which metals has been etched with yellow permanent pen.

PolySi Etch data

Platinum wet etch
General description

Etch of Platinum

Link to safety APV see APV here.
Chemical solution HCl : HNO3 : H2O (7 : 1 : 8)
Process temperature 85 °C
Possible masking materials None
Etch rate Mainly used as stripper
Batch size

1-7 4" wafers at a time

Size of substrate

Any that fits into a carrier that can go into the glass beaker

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