Specific Process Knowledge/Thin film deposition/Deposition of Tungsten/HiPIMS Sputtering of W in Sputter-system Metal-Nitride (PC3): Revision history

Jump to navigation Jump to search

Diff selection: Mark the radio buttons of the revisions to compare and hit enter or the button at the bottom.
Legend: (cur) = difference with latest revision, (prev) = difference with preceding revision, m = minor edit.

18 February 2023

2 January 2023

  • curprev 15:5315:53, 2 January 2023‎ Eves talk contribs‎ 21,361 bytes +21,361‎ Created page with "Tungsten (W) can be deposited using either e-beam or sputtering methods (at DTU Nanolab). The e-beam method is challenging since a lot of power is involved and focused on the target. This can potentially destabilize the chamber, due to heat generation and the rapid pressure increase. To avoid that a low deposition rate (0.5 Å/s - 1 Å/s) and limited thicknesses have to be selected. The resulting film usually suffers from low density (porosity) and high oxygen levels. On..."
Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Tungsten/HiPIMS_Sputtering_of_W_in_Sputter-system_Metal-Nitride_(PC3)"