Specific Process Knowledge/Thin film deposition/Deposition of Silicon Carbide/Deposition of SiC in Sputter-System Lesker: Revision history

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18 February 2023

20 December 2022

15 December 2022

  • curprev 21:5121:51, 15 December 2022‎ Eves talk contribs‎ 10,128 bytes +10,128‎ Created page with "We can deposit SiC by RF sputtering in Sputter-System (Lesker). A 2-inch target from gun 5 (RF) is used in the process. Since the material is dielectric we are using 60W power and the slow power ramp. The deposition rate is very slow (<b>0.0056 nm/s</b>), so the oxygen absorption during the process can be an issue. The fabrication and characterization described below were conducted in <b>2022 by Patama Pholprasit and Evgeniy Shkondin, DTU Nanolab</b>. The prepared sampl..."
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