Specific Process Knowledge/Etch/Etching of Silicon Oxide/SiO2 etch using RIE1 or RIE2: Revision history

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curprev 09:3609:36, 5 October 2020‎ Bghe talk contribs‎ 6,982 bytes 0‎ No edit summary

curprev 14:5614:56, 7 May 2018‎ Bghe talk contribs‎ 6,982 bytes +117‎ No edit summary

curprev 07:4907:49, 30 June 2016‎ Bghe talk contribs‎ 6,865 bytes +1‎ →‎The substrate:
curprev 07:4907:49, 30 June 2016‎ Bghe talk contribs‎ 6,864 bytes +63‎ →‎The substrate:
curprev 07:4807:48, 30 June 2016‎ Bghe talk contribs‎ 6,801 bytes −35‎ →‎The silicon can be masked by these materials:

curprev 13:5213:52, 23 September 2013‎ Bghe talk contribs‎ 5,304 bytes +250‎ No edit summary

curprev 14:5814:58, 12 June 2012‎ BGE talk contribs‎ 5,054 bytes +3‎ →‎Burned resist as masking material (developed for waveguides by Haiyan Ou @DTU Photonics):

curprev 15:2215:22, 21 April 2009‎ BGE talk contribs‎ 5,051 bytes +165‎ →‎Most used recipes:
curprev 14:4514:45, 21 April 2009‎ BGE talk contribs‎ 4,886 bytes +262‎ →‎Burned resist as masking material (developed for waveguides by Haiyan Ou @DTU Photonics):
curprev 14:3914:39, 21 April 2009‎ BGE talk contribs‎ 4,624 bytes +15‎ →‎Burned resist as masking material (developed for waveguides by Haiyan Ou @DTU Photonics):
curprev 14:3714:37, 21 April 2009‎ BGE talk contribs‎ 4,609 bytes +81‎ →‎PolySilicon as masking material

curprev 11:3611:36, 25 November 2008‎ BGE talk contribs‎ 4,362 bytes +2‎ →‎Selectivity to photoresist
curprev 10:4110:41, 25 November 2008‎ BGE talk contribs‎ 4,360 bytes +262‎ →‎RIE1:

curprev 09:5809:58, 23 April 2008‎ BGE talk contribs‎ 2,783 bytes +20‎ →‎A survey of the parameter space using photoresist as masking material

curprev 12:1412:14, 25 February 2008‎ BGE talk contribs‎ 2,763 bytes +32‎ →‎Burned resist as masking material (developed for waveguides):

curprev 11:4111:41, 13 December 2007‎ 192.38.87.76 talk‎ 2,731 bytes 0‎ →‎Burned resist as masking material (developed for waveguides):

curprev 13:5313:53, 13 November 2007‎ BGE talk contribs‎ 2,731 bytes +132‎ No edit summary
curprev 13:1413:14, 13 November 2007‎ BGE talk contribs‎ 2,599 bytes +1,309‎ →‎Most used recipe (this recipe is being watched in the in the quality assurance program):

curprev 13:0013:00, 13 November 2007‎ BGE talk contribs‎ 1,290 bytes +1,290‎ New page: RIE (Reactive Ion Etch) can be used for etching silicon oxide. The etch is anisotropic with vertical or angled sidewalls depending on the process recipe and the masking material and geomet...

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