View source for Specific Process Knowledge/Lithography/EBeamLithography/RaithElphyManual

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= Purpose, location and technical specifications =

The Raith Elphy system is a pattern generator built onto the [[Specific_Process_Knowledge/Characterization/SEM:_Scanning_Electron_Microscopy/Leo|LEO Scanning Electron Microscope ]] (SEM) in cleanroom F-2. All users must therefore acquire license to use the SEM LEO before acquiring license to the Raith Elphy system. 

== Techical Specification ==

The system can be characterized as follows:

*Electron-beam scanning speeds, f, up to X MHz are available (which is maximum scan speed).
*The acceleration voltage is maximum 25 kV.
*The maximum field-size without stitching is X µm x Y µm.
*The machine has a chip holder that fits to 2 - 3 chips with sizes of approximately 1 x 1 cm2 each. A larger chip or wafer can also be mounted on a holder without a Faraday's cup.

= Mounting of chips or wafers into chamber =

{| cellpadding="2" style="border: 2px solid darkgray;" align="right"
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| [[File:IMG_0239.jpg|150px]] [[File:IMG_6675.jpg|400px]]
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| Chip holder to Raith Elphy E-beam writer system; the holder has three clamps to hold up to 3 chips and a Faraday's cup to measure beam current.

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