Specific Process Knowledge/Thin film deposition/PECVD/Pre-release tests on PECVD4
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Revision as of 12:03, 24 March 2023 by Bghe (talk | contribs) (→Test runs on PECVD4 before release in 2017 (all recipes from STPS))
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This page is written and all tests done by Berit Herstrøm @DTU Nanolab
Test runs on PECVD4 before release in 2017
Test of standard recipes, dep. rate, RI and stress | |||||||||||||||||||
Recipe | Wafer ID | Dep. rate [nm/min] | RI | Unif. [%] | Stress [MPa] | Comments | SiH4 [sccm] | NH3 [sccm] | N2O [sccm] | N2 [sccm] | B2H6 [sccm] | PH3 [sccm] | Pressure [mTorr] | APC | Power [W] | Load | Tune | Temp [C] | Time [mm:ss] |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
PREDEP | s000008 | 377 nm/min | 1.489 | ±3.1% | 50 | 1800 | 650 | 200LF | ~10 | ~53 | 250/300 | 04:00 | |||||||
LFSIO | s000009 | 92 nm/min | 1.480 | ±1.9% | Without carrier | 12 | 1420 | 392 | 550 | 60LF | ~10 | ~53 | 250/300 | 01:15 | |||||
LFSIO | s000011 | 78 nm/min | 1.483 | ±2.1% | With carrier | 12 | 1420 | 392 | 550 | 60LF | ~10 | ~53 | 250/300 | 01:15 | |||||
HFSiO | s000012 | 64 nm/min | 1.477 | ±0.5% | with carrier | 10 | 1420 | 392 | 900 | 30HF | ~55 | ~58 | 250/300 | 02:00 | |||||
LFSiN | s000013 | 43 nm/min | 1.983 | ±4.4% | with carrier | 40 | 20 | 1960 | 550 | 60LF | ~10 | ~53 | 250/300 | 02:00 | |||||
HFSiN | S000015 | 12.4 nm/min | 2.017 | ±1.2% | With carrier | 40 | 55 | 1960 | 900 | 20HF | ~56 | ~58 | 250/300 | 10:00 | |||||
MFSiN | S000016 | 12.9 nm/min | 2.038 | ±1.7% | With carrier | 40 | 40 | 1960 | 900 | 20HF 6"/20LF 2" | 63/25 | 33auto/92man | 250/300 | 10:00 | |||||
MFSiN (error) | S000016 | 46.8 nm/min | 2.083 | ±3.3% | With carrier - 200W HF by mistake | 40 | 40 | 1960 | 900 | 200HF 6"/20LF 2" | 63/25 | 33auto/92man | 250/300 | 10:00 | |||||
LFSIO st | s000019 | 75.4 | 1.480 | ±2.7% | compressive: 308.9 MPa | Stress test 1µm - stress wafer no. 1 | 12 | 1420 | 392 | 550 | 60LF | ~10 | ~53 | 250/300 | 13:00 | ||||
HFSiO st | S000020 | 63.1 | 1.476 | ±0.3% | compressive: 250.5 MPa | Stress test 1µm - stress wafer no. 2 | 10 | 1420 | 392 | 900 | 30HF | ~55 | ~58 | 250/300 | 16:00 | ||||
LFSiN st | S000021 | 40.4 | 1.984 | ±3.9% | Compressive: 565.4 MPa | Stress test 1µm | 40 | 20 | 1960 | 550 | 60LF | ~10 | ~53 | 250/300 | 23:00 | ||||
HFSiN st | S000033 | 12.17 nm/min | 2.021 | ±1.6 | Tensile: 431.6 MPa | Stress test 0.681 µm | 40 | 55 | 1960 | 900 | 20HF | ~56 | ~58 | 250/300 | 56:00 | ||||
HFSiN st - 200W | S000022 | 61.7 | 2.067 | ±4.0% | Tensile: 56.1MPa | Stress test 3.456 µm | 40 | 55 | 1960 | 900 | 200HF | ~56 | ~58 | 250/300 | 56:00 | ||||
MFSiN st | S000024 | 13.0 | 2.044 | ±1.7 | Tensile: 157 MPa | Stress test ~700nm | 40 | 40 | 1960 | 900 | 20HF 6"/20LF 2" | 59/0 | 60auto/59man | 250/300 | 60:00 | ||||
MFSiN st HF: 200W | S000024 | 46.2 | 2.087 | ±3.6 | Tensile: 38.1 MPa | Stress test ~700nm - HF was running 200W by mistake | 40 | 40 | 1960 | 900 | 200HF 6"/20LF 2" | 59/0 | 60auto/59man | 250/300 | 14:56 | ||||
Standard Waveguide | S000028 | 159.5 | 1.462 | ±0.8 | Compressive: 121.9 MPa | 17 | 2000 | 300 | 700LF | ~35 | ~40 | 250/300 | 40:00 | ||||||
D | D | D | D | D | D | D | D | D | D | D | D | D | D | D | D | D | D | D | |
D | D | D | D | D | D | D | D | D | D | D | D | D | D | D | D | D | D | D |
Run-to-Run Reproducibility
Test of LFSiO at different chamber conditions | ||||||||||||||||||
Recipe | Wafer ID | Dep. rate [nm/min] | RI | Unif. [%] | Comments | SiH4 [sccm] | NH3 [sccm] | N2O [sccm] | N2 [sccm] | B2H6 [sccm] | PH3 [sccm] | Pressure [mTorr] | APC | Power [W] | Load | Tune | Temp [C] | Time [mm:ss] |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
LFSIO | S000019 | 75.4 | 1.480 | ±2.7% | 1 µm At 1.5 µm chamber deposition | 12 | 1420 | 392 | 550 | 60LF | ~10 | ~53 | 250/300 | 13:00 | ||||
LFSIO | s000026 | 76.2 | 1.481 | ±3.5% | 1 µm At 8.4 µm chamber deposition | 12 | 1420 | 392 | 550 | 60LF | ~10 | ~53 | 250/300 | 13:00 |
BPSG
Test BPSG glass - boron and phosphorous doped glass | |||||||||||||||||||
Recipe | Wafer ID | Dep. rate [nm/min] | RI | Unif. [%] | Stress [MPa] | Comments | SiH4 [sccm] | NH3 [sccm] | N2O [sccm] | N2 [sccm] | B2H6 [sccm] | PH3 [sccm] | Pressure [mTorr] | APC | Power [W] | Load | Tune | Temp [C] | Time [mm:ss] |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
BPSG low stress | S000037 | 302 | 1.4598 | ±1.7% | 1.4 compressive | 17 | 1600 | 0 | 240 | 60 | 500 | 800LF | 250/300 | 10:00 | |||||
BPSG | s000038 | 259 | 1.4593 | ±1.7% | 36.7 compressive | 17 | 1600 | 0 | 135 | 40 | 500 | 800LF | 250/300 | 10:00 |