Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/IBE blazed gratings

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This page is written by Berit Herstrøm @ DTU Nanolab (BGHE) if nothing else is stated

• 60nm Barc
• 360nm KRF resist

by bghe@nanolab experiments made in June/July 2012

• Some examples of blazed gratings in fused silica etched with Cr and DUV resist as masking layer
• 

  30 min etch with 100nm Cr mask, used recipe BGHE blazed gratings with CHF3
  *Rotation speed 0 rpm
  *Angle: -35
  *I(N)=400mA
  *RF power=1300W
  *I(B)=300mA
  *V(B)=300V
  *V(AC,B)=500V
  *Ar(N) flow=5sccm
  *Ar(B) flow=5sccm
  *CHF3 flow=15sccm

• 

  45min etch with 100nm Cr mask, used recipe BGHE blazed gratings with CHF3
  *Rotation speed 0 rpm
  *Angle: -35
  *I(N)=400mA
  *RF power=1300W
  *I(B)=300mA
  *V(B)=300V
  *V(AC,B)=500V
  *Ar(N) flow=5sccm
  *Ar(B) flow=5sccm
  *CHF3 flow=15sccm

• 

  20min etch with Krf resist, all resist is gone, used recipe BGHE blazed gratings
  *Rotation speed 0 rpm
  *Angle: -35
  *I(N)=550mA
  *RF power=1300W
  *I(B)=500mA
  *V(B)=600V
  *V(AC,B)=400V
  *Ar(N) flow=5sccm
  *Ar(B) flow=10sccm
  *CHF3 flow=0sccm

• 

  15+30min etch with 50nm Cr mask, used recipe BGHE blazed gratings with CHF3
  *Rotation speed 0 rpm
  *Angle: -35
  *I(N)=400mA
  *RF power=1300W
  *I(B)=300mA
  *V(B)=300V
  *V(AC,B)=500V
  *Ar(N) flow=5sccm
  *Ar(B) flow=5sccm
  *CHF3 flow=15sccm