Specific Process Knowledge/Etch/Etching of Silicon Oxide/SiO2 etch using AOE/PolySi mask/Images of AOEpsiB 8

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This page is written by Berit Herstrøm @ DTU Nanolab (BGHE) if nothing else is stated

Process date: 25. July 2012 by bghe@nanolab Recipe: low line width reduction Process time: 30 min Mask: Poly Si 2.2 µm thick Etch depth: 7.2 µm Line width mask: 8µm Line with after etch: 6.6µm	Process date: 25. July 2012 by bghe@nanolab Recipe: low line width reduction Process time: 30 min Mask: Poly Si 2.2 µm Etch depth: 7.3 µm Line width mask: 6µm Line with after etch: 4.9µm	Process date: 25. July 2012 by bghe@nanolab Recipe: low line width reduction Process time: 30 min Mask: Poly Si 2.2 µm Etch depth: 7.1 µm Line width mask: 4µm Line with after etch: 2.8µm