Specific Process Knowledge/Thin film deposition/Deposition of Silicon Nitride/Deposition of Silicon Nitride using PECVD

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At the moment DTU Nanolab has 2 PECVDs that can deposit silicon nitride and silicon oxynitride. PECVD4 is for clean silicon based and III-V based samples. PECVD3 is for silicon based samples but here up 5% (4 cm2) wafer coverage of other materials as metals are allowed (under some conditions even more). Look at the PECVD page to learn more about the PECVDs at DTU Nanolab. All though PECVD3 and PECVD4 are very much alike you cannot count on the a recipe on one system will give exactly the same results on the other system.

Deposition of SiN with PECVD4

Quality Control (QC) for PECVD4
QC Recipe: QCNITRIDE=HFSIN
SiH4 flow 40 sccm
NH3 flow 55 sccm
N2 flow 1960 sccm
Pressure 900 mTorr
RF-power

HF: 20 W

QC limits PECVD4
Deposition rate 11.0-13.2 nm/min
Non-uniformity <3.0 %
Refractive Index 1.988 - 2.018


Recipe Dep. rate [nm/min] RI Unif. [%] Stress [MPa] Comments SiH4 [sccm] NH3 [sccm] N2O [sccm] N2 [sccm] Pressure [mTorr] Power [W] Load Tune Time [mm:ss] Tested


MF SIN 12.9-13.0 nm/min
11.7 nm/min (kabi 2019-03-01) 		2.038-2.044 ± 1.7% 157 MPa more results 40 40 1920 900 mTorr 20HF6"/20LF2" 10:00/60:00(stress) February 2017 Berit Herstrøm @DTU Nanolab (bghe)
MF SIN2 44.3 nm/min 2.01-2.02 ± 2.7% ? MPa 30 30 1470 850 mTorr 100HF8.2"/100LF2.2" 10:00 February 2020 bghe
LF SIN 40-43 nm/min 1.983-1.984 ± 3.9-4.4% Compressive: 565.4 MPa 40 20 1960 550 mTorr 60LF 2:00/23:00(stress) February 2017 bghe
HF SiN 12.2-12.4 nm/min 2.017-2.021 ± 1.2-1.6% Tensile: 431.6 MPa 40 55 1960 900 mTorr 20 W 10:00/56:00(stress) February 2017 bghe




Recipes on PECVD3 for deposition of silicon nitride and silicon oxynitride

Quality Controle (QC) for PECVD3
QC Recipe: QCNITRIDE
SiH4 flow 30 sccm
NH3 flow 30 sccm
N2 flow 1470 sccm
Pressure 845 mTorr
RF-power
  • HF: 100 W 7.8s
  • LF: 100 W 2.2s
QC limits PECVD3
Deposition rate ~40 nm/min
Non-uniformity <3.0 %
Refractive Index 2.02 - 2.04


Recipes

Recipe name SiH4 flow [sccm] NH3 flow [sccm] N2 flow [sccm] Pressure [mTorr] Power [W] Description
MFSiNLS2 30 30 1470 845 100HF 7.8s

100LF 2.2s

Low stress nitride - standard recipe. The latest measured values can be seen in the process control sheet in LabManager.
MFSiNLS 30 30 1470 650 20HF 6s

30LF 2s

Low stress nitride - old standard recipe. This one is not running well any more.
LFSiN 30 15 1470 550 60LF Compressive stress
HFSiN 30 42 1470 900 20HF Tensile stress

LF=Low Frequency HF=High Frequency MF=Mixed Frequency SiN=Silicon Nitride LS=Low Stress

Expected results

Recipe name Deposition rate [Å/min] RI Uniformity [%]
[Std./mean] 		Stress [MPa] KOH etch rate [Å/min] BHF etch rate [Å/min] See more
MFSiNLS2 ~422 (bghe Feb 2016) ~2.03 ~2 ~6 (bghe Feb 2016) ~2.1 (bghe Feb 2016) ~? see more results
MFSiNLS ~107 ~1.99 ~4 ~-30 ~2.5 ~250 .
LFSiN ~550 ~1.96 ~3 ~-630 . . .
HFSiN ~130 ~1.97 ~2 ~460 . . .

Recipes on PECVD2 for deposition of silicon nitride and silicon oxynitride Expired!:PECVD2 has been DECOMMISSIONED!!

Recipes

Recipe name SiH4 flow [sccm] NH3 flow [sccm] N2 flow [sccm] Pressure [mTorr] Power [W] Description
SINSTD80 30 20 1000 500 80
SINSTD96 30 20 1000 500 96
1SiN 40 20 1000 700 150

Expected results

Recipe name Deposition rate [nm/min] RI Uniformity [%] Stress [MPa] BHF etch rate [Å/min] Comments
1SiN

Deposition rate in the middle of two wafers: 49nm/min+-1nm/min (2015-04-24 BGHE)
In the middel: 72.6-76.4 nm/min (2014-08-13 BGHE) Old shower head
Variation over 3 wafers: 71.4-78.6 nm/min (2014-08-13 BGHE) Old shower head

~2-4% (2015-04-24 BGHE)
~5% in the middel (4") (2014-08-13 BGHE) Old shower head
~10% over 3 wafers (2014-08-13 BGHE) Old shower head

SINSTD80 68nm/min (2014-07-07 JML)- unstable deposition rate
SINSTD96 - unstable deposition rate

Recipes on PECVD1 for deposition of silicon nitride and silicon oxynitride. Expired!:PECVD1 has been decommissioned

Recipes

Recipe name SiH4 flow [sccm] NH3 flow [sccm] N2 flow [sccm] Pressure [mTorr] Power [W] Description
1nitride 30 20 1000 500 80
1nit_std 40 20 1960 550 60 Process control recipe

Expected results

Recipe name Deposition rate [nm/min] RI Uniformity [%] Stress [MPa] BHF etch rate [Å/min] Comments
1nitride
1nit_std ~32 1.89 ~1 ~700 The latest measured values can be seen in the process control sheet in LabManager
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