Specific Process Knowledge/Thermal Process: Difference between revisions

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== Choose a process type ==
== Choose a process type ==
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*[[/Oxidation|Oxidation]] - ''Grow a thermal oxide on silicon''
*[[/Oxidation|Oxidation]] - ''Grow a thermal oxide on silicon''
*[[/Annealing|Annealing]]
*[[/Annealing|Annealing]]
*[[/Doping with Boron|Dope with Boron]]
*[[/Dope with Boron|Doping with Boron]]
*[[/Doping with Phosphorus|Dope with Phosphorus]]
*[[/Dope with Phosphorus|Doping with Phosphorus]]
*[[/Pyrolysis|Resist pyrolysis]]


== Choose an equipment to use ==
== Choose an equipment to use ==


'''A stack furnaces:'''
*[[/A1 Bor Drive-in furnace|Boron Drive-in + Predep furnace (A1)]] - ''For oxidation and annealing of Si wafers, and for boron pre-deposition (doping) and for drive-in afterwards''
*[[/A1 Bor Drive-in furnace|Boron Drive-in + Predep furnace (A1)]] - ''For oxidation and annealing of Si wafers, and for boron pre-deposition (doping) and for drive-in afterwards''
*[[/A2 Gate Oxide furnace|Gate Oxide furnace (A2)]] - ''For gate oxide growing on new wafers''
*[[/A2 Gate Oxide furnace|Gate Oxide furnace (A2)]] - Not in use
*[[/A3 Phosphor Drive-in furnace|Phosphorus Drive-in furnace (A3)]] - ''For oxidation and annealing of Si wafers and for drive-in after phosphorus pre-dep''
*[[/A3 Phosphor Drive-in furnace|Phosphorus Drive-in furnace (A3)]] - ''For oxidation and annealing of Si wafers and for drive-in after phosphorus pre-dep''
*[[/A4 Phosphor Pre-dep furnace|Phosphorus Predep furnace (A4)]] - ''For pre-deposition (doping) of phosphorus on Si wafers''  
*[[/A4 Phosphor Pre-dep furnace|Phosphorus Predep furnace (A4)]] - ''For pre-deposition (doping) of phosphorus on Si wafers''  
*[[/C1 Furnace Anneal-oxide|Anneal-oxide furnace(C1)]] - ''For oxidation and annealing of 100 mm and 150 mm wafers''
 
'''C stack furnaces:'''
*[[/C1 Furnace Anneal-oxide|Anneal-oxide furnace (C1)]] - ''For oxidation and annealing of 100 mm and 150 mm wafers''
*[[/C2 Furnace III-V oxidation |III-V oxidation furnace (C2)]] - ''For oxidation of Al<sub>x</sub>GaAs layers.''
*[[/C3 Anneal-bond furnace|Anneal-bond furnace (C3)]] - ''For oxidation and annealing of bonded wafers''
*[[/C3 Anneal-bond furnace|Anneal-bond furnace (C3)]] - ''For oxidation and annealing of bonded wafers''
*[[/C4 Aluminium Anneal furnace|Aluminium Anneal furnace (C4)]] - ''For oxidation and annealing of wafers containing aluminium''
*[[/C4 Aluminium Anneal furnace|Aluminium Anneal furnace (C4)]] - ''For annealing and oxidation of wafers containing e.g. aluminium, Al<sub>2</sub>O<sub>3</sub> and TiO<sub>2</sub> ''
*[[/Furnace Noble|Noble furnace]] - ''For annealing and oxidation of non-clean wafers''
 
'''E stack furnaces:'''
*[[/E1 Furnace Oxidation (8")|Oxidation (8") furnace (E1)]] - ''For oxidation and annealing of 150 mm and 200 mm wafers''
 
'''Other furnaces:'''
*[[/Resist Pyrolysis furnace |Resist Pyrolysis (former Multipurpose Anneal) furnace]] - ''For mainly resist pyrolysis''
*[[/RTP Jipelec 2|RTP2 Jipelec]] - ''For rapid thermal annealing of III-V materials, Si-based materials and some metals''
*[[/RTP Annealsys|RTP Annealsys]] - ''For rapid thermal annealing, rapid thermal oxidation and smoothing of Si-based materials.''
*[[/BCB Curing Oven|BCB Curing oven]] - ''For resist curing and metal alloying''layers''
 
== Rules for storage and RCA cleaning of wafers to the A and C stack furnaces ==
 
*[[/Storage and cleaning of wafer to the A, B, C and E stack furnaces|Storage and cleaning of wafer to the A and C stack furnaces]]
 
 
== Manual for the furnace computer to the A, B, C and E stack furnaces ==
 
The A, B, C and E stack furnaces can be controlled either from a touch screen by each furnace or from a furnace computer. The user manual for the furnace computer can be found here in [https://labmanager.dtu.dk/d4Show.php?id=1926| LabManager] (login required):
 
== Decommissioned equipment ==
 
*[[/Jipelec RTP|RTP Jipelec]] - ''For rapid thermal annealing of III-V materials and Si-based materials''
*[[/Furnace APOX|APOX furnace]] - ''For growing of very thick oxide layers''
*[[/Furnace APOX|APOX furnace]] - ''For growing of very thick oxide layers''
*[[/Jipelec RTP|Jipelec RTP]] - ''For rapid thermal annealing of III-V materials and Si based materials''
*[[/BCB Curing Oven|BCB Curing oven]] - ''For resist curing and metal alloying''
*[[/Furnace: Multipurpose annealing |Furnace: Multipurpose annealing ]] - ''For annealing, oxidation and resist pyrolysis''
*[[/Resist Pyrolysis Furnace|Resist Pyrolysis furnace]] - ''For pyrolysis of different resist layers''
*[[/D4 III-V Oven|III-V Oven (D4)]] - ''For oxidation of Al<sub>x</sub>GaAs layers.''
*[[/D4 III-V Oven|III-V Oven (D4)]] - ''For oxidation of Al<sub>x</sub>GaAs layers.''
*[[/Resist Pyrolysis Furnace|Old Resist Pyrolysis furnace]] - ''For pyrolysis of different resist
*[[/Furnace Noble|Noble furnace]] - ''For annealing and oxidation of non-clean wafers''

Latest revision as of 14:57, 26 February 2024

Feedback to this page: click here

This page is written by DTU Nanolab internal


Choose a process type

Choose an equipment to use

A stack furnaces:

C stack furnaces:

E stack furnaces:

Other furnaces:

Rules for storage and RCA cleaning of wafers to the A and C stack furnaces


Manual for the furnace computer to the A, B, C and E stack furnaces

The A, B, C and E stack furnaces can be controlled either from a touch screen by each furnace or from a furnace computer. The user manual for the furnace computer can be found here in LabManager (login required):

Decommissioned equipment