Specific Process Knowledge/Thermal Process: Difference between revisions
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*[[/C2 Furnace III-V oxidation |III-V oxidation furnace (C2)]] - ''For oxidation of Al<sub>x</sub>GaAs layers.'' | *[[/C2 Furnace III-V oxidation |III-V oxidation furnace (C2)]] - ''For oxidation of Al<sub>x</sub>GaAs layers.'' | ||
*[[/C3 Anneal-bond furnace|Anneal-bond furnace (C3)]] - ''For oxidation and annealing of bonded wafers'' | *[[/C3 Anneal-bond furnace|Anneal-bond furnace (C3)]] - ''For oxidation and annealing of bonded wafers'' | ||
*[[/C4 Aluminium Anneal furnace|Aluminium Anneal furnace (C4)]] - ''For annealing of wafers containing aluminium, Al<sub>2</sub>O<sub>3</sub> and TiO<sub>2</sub> '' | *[[/C4 Aluminium Anneal furnace|Aluminium Anneal furnace (C4)]] - ''For annealing and oxidation of wafers containing e.g. aluminium, Al<sub>2</sub>O<sub>3</sub> and TiO<sub>2</sub> '' | ||
'''E stack furnaces:''' | '''E stack furnaces:''' | ||
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*[[/RTP Annealsys|RTP Annealsys]] - ''For rapid thermal annealing and smoothing of Si based materials'' | *[[/RTP Annealsys|RTP Annealsys]] - ''For rapid thermal annealing and smoothing of Si based materials'' | ||
*[[/BCB Curing Oven|BCB Curing oven]] - ''For resist curing and metal alloying''layers'' | *[[/BCB Curing Oven|BCB Curing oven]] - ''For resist curing and metal alloying''layers'' | ||
== Rules for storage and RCA cleaning of wafers to the A and C stack furnaces == | == Rules for storage and RCA cleaning of wafers to the A and C stack furnaces == | ||
Revision as of 11:47, 21 November 2023
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Choose a process type
- Oxidation - Grow a thermal oxide on silicon
- Annealing
- Doping with Boron
- Doping with Phosphorus
- Pyrolysis
Choose an equipment to use
A stack furnaces:
- Boron Drive-in + Predep furnace (A1) - For oxidation and annealing of Si wafers, and for boron pre-deposition (doping) and for drive-in afterwards
- Gate Oxide furnace (A2) - Not in use
- Phosphorus Drive-in furnace (A3) - For oxidation and annealing of Si wafers and for drive-in after phosphorus pre-dep
- Phosphorus Predep furnace (A4) - For pre-deposition (doping) of phosphorus on Si wafers
C stack furnaces:
- Anneal-oxide furnace (C1) - For oxidation and annealing of 100 mm and 150 mm wafers
- III-V oxidation furnace (C2) - For oxidation of AlxGaAs layers.
- Anneal-bond furnace (C3) - For oxidation and annealing of bonded wafers
- Aluminium Anneal furnace (C4) - For annealing and oxidation of wafers containing e.g. aluminium, Al2O3 and TiO2
E stack furnaces:
- Oxidation (8") furnace (E1) - For oxidation and annealing of 150 mm and 200 mm wafers
Other furnaces:
- Furnace: Multipurpose annealing - For annealing, oxidation and resist pyrolysis
- RTP Jipelec 2 - For rapid thermal annealing of III-V materials and Si based materials
- RTP Annealsys - For rapid thermal annealing and smoothing of Si based materials
- BCB Curing oven - For resist curing and metal alloyinglayers
Rules for storage and RCA cleaning of wafers to the A and C stack furnaces
Manual for the furnace computer to the A, B, C and E stack furnaces
The A, B, C and E stack furnaces can be controlled either from a touch screen by each furnace or from a furnace computer. The user manual for the furnace computer can be found here in LabManager (login required):
Decommissioned equipment
- RTP Jipelec - For rapid thermal annealing of III-V materials and Si based materials
- APOX furnace - For growing of very thick oxide layers
- III-V Oven (D4) - For oxidation of AlxGaAs layers.
- Resist Pyrolysis furnace - For pyrolysis of different resist
- Noble furnace - For annealing and oxidation of non-clean wafers