Specific Process Knowledge/Thin film deposition/Sputter deposition of metals and alloys

From LabAdviser
Jump to navigation Jump to search

Feedback to this page: click here

Unless otherwise stated, this page is written by DTU Nanolab internal


Sputter deposition of metals, alloys, and carbides

Many metals and some alloys and carbides are well suited for sputter deposition. Below you can compare the sputter systems available here at Nanolab for depositing them.

This page is a collective page for metals, alloys, and carbides that we do not deposit by any other methods. Other metals that may be deposited both by sputtering and other methods are described on their own individual metal pages (see the thin film main page).

Metals which have been sputter deposited here at Nanolab and which cannot be deposited here by e-beam or thermal evaporation include:

  • Cobalt (note that we usually say no to this material as it is toxic and complicates cleaning and maintenance of the sputter systems)
  • Iron (deposited previously in the Sputter-System (Lesker), see process log)

Alloys which may be sputter deposited here at Nanolab include:


Carbides which may be sputter deposited here at Nanolab include:

Comparison of sputter deposition options for metal alloys and magnetic metals


Sputter deposition (Wordentec) Sputter deposition (Sputter-System (Lesker)) Sputter deposition (Sputter-system Metal-Oxide (PC1)) Sputter deposition (Sputter-system Metal-Nitride (PC3))
General description

Sputter deposition in chamber which also has thermal and e-beam evaporation sources. Single 6" sputter target directly below substrate. The large target and short target-substrate distance result in relatively good uniformity.

Sputter deposition in chamber with 6 x 2" sputter guns at a slight angle to the substrate.

Sputter deposition in chamber with 6 x 3" sputter guns for metal and oxide deposition. Targets at a sligth angle to the substrate.

Sputter deposition in chamber with 3 x 3" sputter guns at an angle to the substrate and 1 x 4" target directly facing the substrate for metal and nitride deposition.

Pre-clean RF Ar clean RF Ar clean RF Ar clean RF Ar clean
Target (source material) size 6" 2" 3" 3" and 4"
Angle between target and substrate facing directly tilted tilted tilted (3") and facing directly (4")
Power supply options DC DC and RF DC, RF, Pulsed DC, and HiPIMS DC, RF, Pulsed DC, and HiPIMS
Other options High-strength magnet for magnetic materials High-strength magnet for magnetic materials
Batch size
  • 24x2" wafers or
  • 6x4" wafers or
  • 6x6" wafers
  • 1x4" wafer or
  • 1x6" wafer or

several small samples

  • up to 10x4" wafers or
  • up to 10x6" wafers
  • or many smaller samples
  • up to 10x4" wafers or
  • up to 10x6" wafers
  • or many smaller samples
Pumping time from wafer load

Approx. 1.5 hours

Approx. 10 min

Approx. 5 min plus 6 min transfer time

Approx. 5 min plus 6 min transfer time

Allowed substrates
  • Silicon wafers
  • Quartz wafers
  • Pyrex wafers
  • Silicon wafers
  • And almost any that does not degas. Special carrier for III-V materials.
  • Silicon wafers
  • And almost any that does not degas. Special carrier for III-V materials.
  • Silicon wafers
  • And almost any that does not degas. Special carrier for III-V materials.
Allowed materials
  • Silicon oxide
  • Silicon (oxy)nitride
  • Photoresist
  • PMMA
  • Mylar
  • SU-8
  • Metals
Comments Has been used for TiW and NiV of the alloys mentioned above. You are welcome to request other sputter targets suited for DC sputtering. Has been used for many alloys. Can sputter magnetic materials like Fe, Co, and alloys containing these metals. You are welcome to request your material of choice. This is our old workhorse, a relatively dirty system. We expect that this system will be used for many alloys. Can sputter magnetic materials like Fe, Co, and alloys containing these metals. You are welcome to request your material of choice. This is our new system for larger batches and more demanding materials - but also for normal sputtering needs. This system is mainly intended for materials where it is important to avoid oxygen in the sputtered layer or where it is important to use a 4" target directly below the substrate for high uniformity but the Wordentec is not suitable (if you need high uniformity and RF, pulsed DC or HiPIMS sputtering. Please contact us with requests.).
Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Thin_film_deposition/Sputter_deposition_of_metals_and_alloys&oldid=47679"