Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4
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Pegasus 4 - 150mm silicon oxide and silicon nitride etching
The DRIE-Pegasus3 and DRIE-Pegasus4 operator station and cassette loading stations, Photo: DTU Nanolab internal
DRIE-Pegasus 4 is dedicated Silicon oxide and Silicon nitride etching. It is originally designed for silicon etching but gas mass flow controllers has been changed to optimize silicon oxide and silicon nitride etching. The system is setup for 6" wafers. Sampler samples has to be bonded to a 6" carrier to be etched in the system.
The user manual and contact information can be found in LabManager:
DRIE Pegasus 4 in LabManager - requires login
Process information
Standard recipes
- Barc Etch
- SiO2 Etch
- Nitride etch with SiO2 etch recipes
- Slow etch of silicon nitride and silicon oxide
Wafer bonding
To find information on how to bond wafers or chips to a carrier wafer, click here.