Specific Process Knowledge/Thin film deposition/PECVD: Difference between revisions
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'''Feedback to this page''': '''[mailto:labadviser@ | '''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/PECVD click here]''' <br> | ||
[[Category: Equipment|Thin film PECVD]] | [[Category: Equipment|Thin film PECVD]] | ||
[[Category: Thin Film Deposition|PECVD]] | [[Category: Thin Film Deposition|PECVD]] | ||
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==PECVD Plasma Enhanced Chemical Vapor Deposition== | ==PECVD Plasma Enhanced Chemical Vapor Deposition== | ||
[[image: | Name PECVD4: PRO CVD <br> | ||
[[image: | Vendor: SPTS <br> | ||
We have two PECVD's here at | [[image:PECVD3a.jpg|300x300px|right|thumb|PECVD3 - positioned in cleanroom A-1, photo: DTU Nanolab internal]] | ||
[[image:PECVD4.JPG|300x300px|right|thumb|PECVD4 - positioned in cleanroom B-1, photo: DTU Nanolab internal]] | |||
We have two PECVD's here at DTU Nanolab. They can both be used to deposit Silicon oxides and Silicon nitrides with or without dopants of Boron and Phosphorus. PECVD3 can also deposit thin layer of aSi. PECVD3 is used for silicon based processing with small amounts (<5% wafer coverage, under some condition even more) of metals where as PECVD4 is dedicated for clean wafers both for silicon based materials and III-V materials. Quartz carriers are used in PECVD4 and they are dedicated the two different material groups to avoid cross contamination. See the precise rules in the equipment manuals which are uploaded in LabManager. | |||
PECVD is a chemical vapor deposition process that applies a plasma to enhance chemical reaction rates of reactive | PECVD is a chemical vapor deposition process that applies a plasma to enhance chemical reaction rates of reactive species. PECVD processing allows deposition at lower temperatures, which is often critical in the manufacture of semiconductors. PECVD films are however known for not being stochiometeric and normally a lot of hydrogen is incorporated inside the films. | ||
All though | All though PECVD4 and 3 are very similar you should not expect to transfer a recipe between the systems and get the exact same result. | ||
'''The user manuals, quality control procedures and results, user APVs, technical information and contact information can be found in LabManager:''' | '''The user manuals, quality control procedures and results, user APVs, technical information and contact information can be found in LabManager (requires login):''' | ||
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<!-- give the link to the equipment info page in LabManager: --> | <!-- give the link to the equipment info page in LabManager: --> | ||
[http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach= | [http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=106 PECVD3 in LabManager]<br/> | ||
[http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach= | [http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=395 PECVD4 in LabManager] | ||
== Process information on | == Process information on PECVD3 and PECVD4== | ||
*[[Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide/Deposition of Silicon Oxide using PECVD|Recipes for deposition of silicon oxides]] | *[[Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide/Deposition of Silicon Oxide using PECVD|Recipes for deposition of silicon oxides]] | ||
*[[Specific Process Knowledge/Thin film deposition/Deposition of Silicon Nitride/Deposition of Silicon Nitride using PECVD | *[[Specific Process Knowledge/Thin film deposition/Deposition of Silicon Nitride/Deposition of Silicon Nitride using PECVD|Recipes on for deposition of silicon nitride and silicon oxynitride]] | ||
*[[/Doping|Doping with boron]] | *[[/Doping|Doping with boron]] | ||
*[[/Pre-release tests on PECVD4|Pre-release tests on PECVD4]] | *[[/Pre-release tests on PECVD4|Pre-release tests on PECVD4]] | ||
*[[Specific Process Knowledge/Thin film deposition/Deposition of Silicon/Si deposition using PECVD|Si deposition using PECVD3]] | |||
<br clear="all" /> | <br clear="all" /> | ||
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!colspan="2" border="none" style="background:silver; color:black;" align="center"|PECVD | !colspan="2" border="none" style="background:silver; color:black;" align="center"|PECVD | ||
|style="background:WhiteSmoke; color:black"|<b>PECVD3</b> | |style="background:WhiteSmoke; color:black"|<b>PECVD3</b> | ||
|style="background:WhiteSmoke; color:black"|<b>PECVD4</b> | |style="background:WhiteSmoke; color:black"|<b>PECVD4</b> | ||
|- | |- | ||
!style="background:silver; color:black;" align="left"|Purpose | !style="background:silver; color:black;" align="left"|Purpose | ||
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*Silicon nitride | *Silicon nitride | ||
*Silicon oxynitride | *Silicon oxynitride | ||
* | *BPSG (Boron Phosphorous doped Silica Glass) | ||
*aSi | |||
* | |||
| | | | ||
*Silicon oxide | *Silicon oxide | ||
*Silicon nitride | *Silicon nitride | ||
*Silicon oxynitride | *Silicon oxynitride | ||
* | *BPSG (Boron Phosphorous doped Silica Glass) | ||
|- | |- | ||
!style="background:silver; color:black" align="left" rowspan="4" valign="top" |Performance | !style="background:silver; color:black" align="left" rowspan="4" valign="top" |Performance | ||
|style="background:LightGrey; color:black"|Film thickness | |style="background:LightGrey; color:black"|Film thickness | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
*~10nm - 30µm | *~10nm - 30µm | ||
| | | | ||
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|style="background:LightGrey; color:black"|Index of refraction | |style="background:LightGrey; color:black"|Index of refraction | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
*~1.4-2.1 | *~1.4-2.1 | ||
| | | | ||
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|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
*In general: Not so good | *In general: Not so good | ||
* | *BPSG: Floats at 1000<sup>o</sup>C | ||
| | | | ||
*In general: Not so good | *In general: Not so good | ||
* | *BPSG: Floats at 1000<sup>o</sup>C | ||
|- | |- | ||
|style="background:LightGrey; color:black"|Film quality | |style="background:LightGrey; color:black"|Film quality | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
*Not so dense film | *Not so dense film | ||
*Hydrogen will be incorporated in the films | *Hydrogen will be incorporated in the films | ||
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|style="background:LightGrey; color:black"|Process Temperature | |style="background:LightGrey; color:black"|Process Temperature | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
*300 <sup>o</sup>C | *300 <sup>o</sup>C | ||
| | | | ||
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|style="background:LightGrey; color:black"|Process pressure | |style="background:LightGrey; color:black"|Process pressure | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
*~200-900 mTorr | *~200-900 mTorr | ||
| | | | ||
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|style="background:LightGrey; color:black"|Gas flows | |style="background:LightGrey; color:black"|Gas flows | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
*SiH<sub>4</sub>:0- | *SiH<sub>4</sub>:0-180 sccm | ||
*N<sub>2</sub>O:0- | *N<sub>2</sub>O:0-3000 sccm | ||
*NH<sub>3</sub>:0- | *NH<sub>3</sub>:0-1000 sccm | ||
*N<sub>2</sub>:0-3000 sccm | *N<sub>2</sub>:0-3000 sccm | ||
*GeH<sub>4</sub>:0-6.00 sccm | *GeH<sub>4</sub>:0-6.00 sccm | ||
*5%PH<sub>3</sub>:0- | *5%PH<sub>3</sub>:0-60 sccm | ||
*3%B<sub>2</sub>H<sub>6</sub>:0-1000 sccm | *3%B<sub>2</sub>H<sub>6</sub>:0-1000 sccm | ||
| | | | ||
*SiH<sub>4</sub>:0-60 sccm | *SiH<sub>4</sub>:0-60 sccm | ||
*N<sub>2</sub>O:0-3000 sccm | *N<sub>2</sub>O:0-3000 sccm | ||
*NH<sub>3</sub>:0- | *NH<sub>3</sub>:0-400 sccm | ||
*N<sub>2</sub>:0-3000 sccm | *N<sub>2</sub>:0-3000 sccm | ||
* | *Ar:0-1000 sccm | ||
*He: 200sccm | |||
*5%PH<sub>3</sub>:0-100 sccm | |||
*3%B<sub>2</sub>H<sub>6</sub>:0-850 sccm | |||
* | |||
*5%PH<sub>3</sub>:0- | |||
* | |||
|- | |- | ||
!style="background:silver; color:black" align="left" rowspan="3" valign="top" |Substrates | !style="background:silver; color:black" align="left" rowspan="3" valign="top" |Substrates | ||
|style="background:LightGrey; color:black"|Batch size | |style="background:LightGrey; color:black"|Batch size | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
*One 4" wafer per run | *One 4" wafer per run | ||
*One 6" wafer per run | *One 6" wafer per run | ||
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| style="background:LightGrey; color:black"|Materials allowed | | style="background:LightGrey; color:black"|Materials allowed | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
*Silicon wafers, Quarts (fused silica) wafers | *Silicon wafers, Quarts (fused silica) wafers | ||
**with layers of silicon oxide or silicon (oxy)nitride | **with layers of silicon oxide or silicon (oxy)nitride |
Latest revision as of 08:53, 26 May 2023
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Unless otherwise stated, this page is written by DTU Nanolab internal
PECVD Plasma Enhanced Chemical Vapor Deposition
Name PECVD4: PRO CVD
Vendor: SPTS
We have two PECVD's here at DTU Nanolab. They can both be used to deposit Silicon oxides and Silicon nitrides with or without dopants of Boron and Phosphorus. PECVD3 can also deposit thin layer of aSi. PECVD3 is used for silicon based processing with small amounts (<5% wafer coverage, under some condition even more) of metals where as PECVD4 is dedicated for clean wafers both for silicon based materials and III-V materials. Quartz carriers are used in PECVD4 and they are dedicated the two different material groups to avoid cross contamination. See the precise rules in the equipment manuals which are uploaded in LabManager.
PECVD is a chemical vapor deposition process that applies a plasma to enhance chemical reaction rates of reactive species. PECVD processing allows deposition at lower temperatures, which is often critical in the manufacture of semiconductors. PECVD films are however known for not being stochiometeric and normally a lot of hydrogen is incorporated inside the films.
All though PECVD4 and 3 are very similar you should not expect to transfer a recipe between the systems and get the exact same result.
The user manuals, quality control procedures and results, user APVs, technical information and contact information can be found in LabManager (requires login):
PECVD3 in LabManager
PECVD4 in LabManager
Process information on PECVD3 and PECVD4
- Recipes for deposition of silicon oxides
- Recipes on for deposition of silicon nitride and silicon oxynitride
- Doping with boron
- Pre-release tests on PECVD4
PECVD | PECVD3 | PECVD4 | |
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Purpose | Deposition of dielectrica |
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Performance | Film thickness |
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Index of refraction |
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Step coverage |
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Film quality |
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| |
Process parameter range | Process Temperature |
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Process pressure |
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Gas flows |
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| |
Substrates | Batch size |
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Materials allowed |
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|