Specific Process Knowledge/Thin film deposition/PECVD/Pre-release tests on PECVD4

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This page is written and all tests done by Berit Herstrøm @DTU Nanolab

Test runs on PECVD4 before release in 2017

Test of standard recipes, dep. rate, RI and stress
Recipe Wafer ID Dep. rate [nm/min] RI Unif. [%] Stress [MPa] Comments SiH4 [sccm] NH3 [sccm] N2O [sccm] N2 [sccm] B2H6 [sccm] PH3 [sccm] Pressure [mTorr] APC Power [W] Load Tune Temp [C] Time [mm:ss]
PREDEP s000008 377 nm/min 1.489 ±3.1%     50   1800       650   200LF ~10 ~53 250/300 04:00
LFSIO s000009 92 nm/min 1.480 ±1.9%   Without carrier 12   1420 392     550   60LF ~10 ~53 250/300 01:15
LFSIO s000011 78 nm/min 1.483 ±2.1%   With carrier 12   1420 392     550   60LF ~10 ~53 250/300 01:15
HFSiO s000012 64 nm/min 1.477 ±0.5%   with carrier 10   1420 392     900   30HF ~55 ~58 250/300 02:00
LFSiN s000013 43 nm/min 1.983 ±4.4%   with carrier 40 20   1960     550   60LF ~10 ~53 250/300 02:00
HFSiN S000015 12.4 nm/min 2.017 ±1.2%   With carrier 40 55   1960     900   20HF ~56 ~58 250/300 10:00
MFSiN S000016 12.9 nm/min 2.038 ±1.7%   With carrier 40 40   1960     900   20HF 6"/20LF 2" 63/25 33auto/92man 250/300 10:00
MFSiN (error) S000016 46.8 nm/min 2.083 ±3.3%   With carrier - 200W HF by mistake 40 40   1960     900   200HF 6"/20LF 2" 63/25 33auto/92man 250/300 10:00
LFSIO st s000019 75.4 1.480 ±2.7% compressive: 308.9 MPa Stress test 1µm - stress wafer no. 1 12   1420 392     550   60LF ~10 ~53 250/300 13:00
HFSiO st S000020 63.1 1.476 ±0.3% compressive: 250.5 MPa Stress test 1µm - stress wafer no. 2 10   1420 392     900   30HF ~55 ~58 250/300 16:00
LFSiN st S000021 40.4 1.984 ±3.9% Compressive: 565.4 MPa Stress test 1µm 40 20   1960     550   60LF ~10 ~53 250/300 23:00
HFSiN st S000033 12.17 nm/min 2.021 ±1.6 Tensile: 431.6 MPa Stress test 0.681 µm 40 55   1960     900   20HF ~56 ~58 250/300 56:00
HFSiN st - 200W S000022 61.7 2.067 ±4.0% Tensile: 56.1MPa Stress test 3.456 µm 40 55   1960     900   200HF ~56 ~58 250/300 56:00
MFSiN st S000024 13.0 2.044 ±1.7 Tensile: 157 MPa Stress test ~700nm 40 40   1960     900   20HF 6"/20LF 2" 59/0 60auto/59man 250/300 60:00
MFSiN st HF: 200W S000024 46.2 2.087 ±3.6 Tensile: 38.1 MPa Stress test ~700nm - HF was running 200W by mistake 40 40   1960     900   200HF 6"/20LF 2" 59/0 60auto/59man 250/300 14:56
Standard Waveguide S000028 159.5 1.462 ±0.8 Compressive: 121.9 MPa   17   2000       300   700LF ~35 ~40 250/300 40:00
D   D D D D D D D D D D D D D D D D D D
D   D D D D D D D D D D D D D D D D D D

Run-to-Run Reproducibility

Test of LFSiO at different chamber conditions
Recipe Wafer ID Dep. rate [nm/min] RI Unif. [%] Comments SiH4 [sccm] NH3 [sccm] N2O [sccm] N2 [sccm] B2H6 [sccm] PH3 [sccm] Pressure [mTorr] APC Power [W] Load Tune Temp [C] Time [mm:ss]
LFSIO S000019 75.4 1.480 ±2.7% 1 µm At 1.5 µm chamber deposition 12   1420 392     550   60LF ~10 ~53 250/300 13:00
LFSIO s000026 76.2 1.481 ±3.5% 1 µm At 8.4 µm chamber deposition 12   1420 392     550   60LF ~10 ~53 250/300 13:00

BPSG

Test BPSG glass - boron and phosphorous doped glass
Recipe Wafer ID Dep. rate [nm/min] RI Unif. [%] Stress [MPa] Comments SiH4 [sccm] NH3 [sccm] N2O [sccm] N2 [sccm] B2H6 [sccm] PH3 [sccm] Pressure [mTorr] APC Power [W] Load Tune Temp [C] Time [mm:ss]
BPSG low stress S000037 302 1.4598 ±1.7% 1.4 compressive 17   1600 0 240 60 500   800LF     250/300 10:00
BPSG s000038 259 1.4593 ±1.7% 36.7 compressive 17   1600 0 135 40 500   800LF     250/300 10:00
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