Specific Process Knowledge/Thin film deposition/PECVD: Difference between revisions

From LabAdviser
Bghe (talk | contribs)
Bghe (talk | contribs)
Line 34: Line 34:
|style="background:WhiteSmoke; color:black"|<b>PECVD2</b>
|style="background:WhiteSmoke; color:black"|<b>PECVD2</b>
|style="background:WhiteSmoke; color:black"|<b>PECVD3</b>
|style="background:WhiteSmoke; color:black"|<b>PECVD3</b>
 
|style="background:WhiteSmoke; color:black"|<b>PECVD4</b>
|-
|-
!style="background:silver; color:black;" align="left"|Purpose  
!style="background:silver; color:black;" align="left"|Purpose  
Line 50: Line 50:
*PBSG (Phosphorous Boron doped Silica Glass)
*PBSG (Phosphorous Boron doped Silica Glass)
*Silicon oxide doped with Germanium
*Silicon oxide doped with Germanium
|
*Silicon oxide
*Silicon nitride
*Silicon oxynitride
*PBSG (Phosphorous Boron doped Silica Glass)
|-
|-
!style="background:silver; color:black" align="left" rowspan="4" valign="top" |Performance
!style="background:silver; color:black" align="left" rowspan="4" valign="top" |Performance
|style="background:LightGrey; color:black"|Film thickness
|style="background:LightGrey; color:black"|Film thickness
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*~10nm - 30µm
|
*~10nm - 30µm
*~10nm - 30µm
|
|
Line 60: Line 67:
|style="background:LightGrey; color:black"|Index of refraction
|style="background:LightGrey; color:black"|Index of refraction
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*~1.4-2.1
|
*~1.4-2.1
*~1.4-2.1
|
|
Line 66: Line 75:
|style="background:LightGrey; color:black"|Step coverage
|style="background:LightGrey; color:black"|Step coverage
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*In general: Not so good
*PBSG: Floats at 1000<sup>o</sup>C
|
*In general: Not so good
*In general: Not so good
*PBSG: Floats at 1000<sup>o</sup>C
*PBSG: Floats at 1000<sup>o</sup>C
Line 74: Line 86:
|style="background:LightGrey; color:black"|Film quality
|style="background:LightGrey; color:black"|Film quality
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Not so dense film
*Hydrogen will be incorporated in the films
|
*Not so dense film
*Not so dense film
*Hydrogen will be incorporated in the films
*Hydrogen will be incorporated in the films
Line 83: Line 98:
|style="background:LightGrey; color:black"|Process Temperature
|style="background:LightGrey; color:black"|Process Temperature
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*300 <sup>o</sup>C
|
*300 <sup>o</sup>C
*300 <sup>o</sup>C
|
|
Line 89: Line 106:
|style="background:LightGrey; color:black"|Process pressure
|style="background:LightGrey; color:black"|Process pressure
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*~200-900 mTorr
|
*~200-900 mTorr
*~200-900 mTorr
|
|
Line 110: Line 129:
*5%PH<sub>3</sub>:0-99 sccm
*5%PH<sub>3</sub>:0-99 sccm
*5%B<sub>2</sub>H<sub>6</sub>:0-1000 sccm
*5%B<sub>2</sub>H<sub>6</sub>:0-1000 sccm
|
*SiH<sub>4</sub>:0-? sccm
*N<sub>2</sub>O:0-? sccm
*NH<sub>3</sub>:0-? sccm
*N<sub>2</sub>:0-? sccm
*5%PH<sub>3</sub>:0-? sccm
*5%B<sub>2</sub>H<sub>6</sub>:0-? sccm
|-
|-
!style="background:silver; color:black" align="left" rowspan="3" valign="top" |Substrates
!style="background:silver; color:black" align="left" rowspan="3" valign="top" |Substrates
Line 123: Line 149:
*Or several smaller pieces on carrier wafer
*Or several smaller pieces on carrier wafer
*Deposition on one side of the substrate
*Deposition on one side of the substrate
 
|
 
*One to 7 2" wafer per run
*One 4" wafer per run
*One 6" wafer per run
*Or several smaller pieces
*Deposition on one side of the substrate
|-
|-
| style="background:LightGrey; color:black"|Materials allowed
| style="background:LightGrey; color:black"|Materials allowed
Line 135: Line 165:
**with layers of silicon oxide or silicon (oxy)nitride
**with layers of silicon oxide or silicon (oxy)nitride
**Other material (can be allowed if less than 3.9 cm2 is exposed to the plasma (<5% coverage of a 4" wafer), please ask!  
**Other material (can be allowed if less than 3.9 cm2 is exposed to the plasma (<5% coverage of a 4" wafer), please ask!  
|
*Silicon wafers, Quartz (fused silica) wafers,
**with layers of silicon oxide or silicon (oxy)nitride
*III-V wafers (on special carriers)
|-  
|-  
|}
|}

Revision as of 10:09, 20 December 2016

Feedback to this page: click here

PECVD Plasma Enhanced Chemical Vapor Deposition

PECVD2 (part of cluster2) - positioned in cleanroom C-1
PECVD3 - positioned in cleanroom A-1

We have two PECVD's here at DANCHIP. They can all be used to deposit Silicon oxides and Silicon nitrides with or without dopants of Boron, Phosphorus and Germanium. PECVD3 is used for silicon based processing with small amounts (<5% wafer coverage) of metals where as PECVD2 is dedicated for clean wafers both for silicon based materials and III-V materials. Quartz carriers are used in PECVD2 and they are dedicated the two different material groups to avoid cross contamination. See the precise rules in the equipment manuals which are uploaded in LabManager.

PECVD is a chemical vapor deposition process that applies a plasma to enhance chemical reaction rates of reactive spices. PECVD processing allows deposition at lower temperatures, which is often critical in the manufacture of semiconductors.

All though PECVD2 and 3 are very similar you should not expect to transfer a recipe between the systems and get the exact same result.

The user manuals, quality control procedures and results, user APVs, technical information and contact information can be found in LabManager:

PECVD2 in LabManager
PECVD3 in LabManager

Process information on PECVD2, PECVD3 and PECVD4


Overview of the performance of PECVD thin films and some process related parameters

PECVD PECVD2 PECVD3 PECVD4
Purpose Deposition of dielectrica
  • Silicon oxide
  • Silicon nitride
  • Silicon oxynitride
  • PBSG (Phosphorous Boron doped Silica Glass)
  • Silicon oxide doped with Germanium
  • Silicon oxide
  • Silicon nitride
  • Silicon oxynitride
  • PBSG (Phosphorous Boron doped Silica Glass)
  • Silicon oxide doped with Germanium
  • Silicon oxide
  • Silicon nitride
  • Silicon oxynitride
  • PBSG (Phosphorous Boron doped Silica Glass)
Performance Film thickness
  • ~10nm - 30µm
  • ~10nm - 30µm
  • ~10nm - 30µm
Index of refraction
  • ~1.4-2.1
  • ~1.4-2.1
  • ~1.4-2.1
Step coverage
  • In general: Not so good
  • PBSG: Floats at 1000oC
  • In general: Not so good
  • PBSG: Floats at 1000oC
  • In general: Not so good
  • PBSG: Floats at 1000oC
Film quality
  • Not so dense film
  • Hydrogen will be incorporated in the films
  • Not so dense film
  • Hydrogen will be incorporated in the films
  • Not so dense film
  • Hydrogen will be incorporated in the films
Process parameter range Process Temperature
  • 300 oC
  • 300 oC
  • 300 oC
Process pressure
  • ~200-900 mTorr
  • ~200-900 mTorr
  • ~200-900 mTorr
Gas flows
  • SiH4:0-50 sccm
  • N2O:0-4260 sccm
  • NH3:0-740 sccm
  • N2:0-3000 sccm
  • GeH4:0-6.00 sccm
  • 5%PH3:0-100 sccm
  • 3%B2H6:0-1000 sccm
  • SiH4:0-60 sccm
  • N2O:0-3000 sccm
  • NH3:0-1000 sccm
  • N2:0-3000 sccm
  • GeH4:0-6.00 sccm
  • 5%PH3:0-99 sccm
  • 5%B2H6:0-1000 sccm
  • SiH4:0-? sccm
  • N2O:0-? sccm
  • NH3:0-? sccm
  • N2:0-? sccm
  • 5%PH3:0-? sccm
  • 5%B2H6:0-? sccm
Substrates Batch size
  • 1-3 4" wafer per run
  • 1 6" wafer per run
  • Or several smaller pieces
  • Deposition on one side of the substrate
  • One 4" wafer per run
  • One 6" wafer per run
  • Or several smaller pieces on carrier wafer
  • Deposition on one side of the substrate
  • One to 7 2" wafer per run
  • One 4" wafer per run
  • One 6" wafer per run
  • Or several smaller pieces
  • Deposition on one side of the substrate
Materials allowed
  • Silicon wafers, Quartz (fused silica) wafers,
    • with layers of silicon oxide or silicon (oxy)nitride
  • III-V wafers (on special carriers)
  • Silicon wafers, Quarts (fused silica) wafers
    • with layers of silicon oxide or silicon (oxy)nitride
    • Other material (can be allowed if less than 3.9 cm2 is exposed to the plasma (<5% coverage of a 4" wafer), please ask!
  • Silicon wafers, Quartz (fused silica) wafers,
    • with layers of silicon oxide or silicon (oxy)nitride
  • III-V wafers (on special carriers)