Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-2/OldConfig
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Unless otherwise stated, the content of this page was created by the dry etch group at DTU Nanolab
Past configurations
Configuration valid from June 13 2022 to May 17 2023
| Item | The currently applied modification | Comments |
|---|---|---|
| Available gasses and gas chemistry | Available gasses:
Not available:
|
OnlySF6 and O2 are used for Si, PR, and Cr etch. The rest is only make-up |
| Plasma source heaters | The following heaters in the plasma source are off:
|
The temperature on the heaters in the plasma source are set to 20 degrees with a high tolerance. This essentially corresponds to powered off compared to default Pegasus temperatures which are in the 120-140 degrees range. The absence of fluorocarbons in the plasma makes it unnecessary to maintain a high temperature on the chamber walls in order to reduce polymer condensation (see below).
Always make sure that the temperature settings in the recipes are not enabled. Click here to have more information. |
| Carbon free plasmas | The process chamber does not have any carbon containing etch gasses. Therefore, polymer build-up on the chamber walls is not an issue. The 'carbon free' policy does not, however, apply to the choice of masking materials and CSAR, AZ and DUV resists are allowed. | |
| Chamber conditioning and cleaning | Running long oxygen cleans is not necessary and must be avoided. Neither are shorter cleans between wafers. | The absence of carbon containing etch gasses ensures that the process chamber is kept clean. |
| Recipes | In the past, only recipes in the 'std' folder were allowed to run. Now, you can develop your own recipes as long as they don't violate any of the limitations/restrictions and rules in this table. | Be extremely careful with recipes in other folders than your own or the 'std' folder as they may no longer be safe to run because of hardware changes. |
| Etch of chromium and silicon nitrides | Recipes for etching chromium and silicon nitrides have been developed. | Etching the two materials is only allowed for processes in combination with other Pegasus 2 specific recipes such as the CORE recipe. Always consult with Nanolab staff. |
| Electrostatic clamping, chip bonding with Galden oil and helium backside cooling are no longer being used. | The processes run in Pegasus 2 operate at such low powers that they do not require very efficient cooling. It has therefore been decided that the following options/procedures
will no longer be required. |
So far we have not seen any changes in the results but if you do, please contact Nanolab staff. |
| Background knowledge required for safe operation | The users and supervisors of Pegasus-2 must carefully read the 4 papers listed in the comments in order to have a correct understanding of the etch process and experimental procedure and how it relates to the Bosch etch performance. | See the papers in the section below. |
Configuration valid from May 25 2022 to June 13 2022
| Item | The currently applied modification | Comments |
|---|---|---|
| Available gasses and gas chemistry | Available gasses:
Not available:
|
OnlySF6 and O2 are used for Si, PR, and Cr etch. The rest is only make-up |
| Plasma source heaters | Applies to
|
The temperature on the heaters in the plasma source are set to 20 degrees with a high tolerance. This essentially corresponds to powered off compared to default Pegasus temperatures which are in the 120-140 degrees range.
Always make sure that the temperature settings in the recipes are not enabled. Click here to have more information. |
| RF power and pressure settings | All recipes run without coil power, very low platen power and low pressures | None of the recipes use coil power in order to prevent aluminium fluoride formation at the aluminium oxide dome. These particles may drop on the wafer or chuck and cause abnormalitites.
Most of the recipes rely on very low pressure and low power - 0.2 mTorr and 10 Watt platen power is not an error and easily supports the plasma. |
| Carbon free plasmas | The process chamber does not have any carbon containing etch gasses. Therefore, polymer build-up on the chamber walls is not an issue. The 'carbon free' policy does not, however, apply to the choice of masking materials and CSAR, AZ and DUV resists are allowed. | |
| Chamber conditioning and cleaning | Running long oxygen cleans is not necessary and must be avoided. Neither are shorter cleans between wafers. | The absence of carbon containing etch gasses ensures that the process chamber is kept clean. |
| Approved recipes | The 'std' folder holds the list of currently allowed recipes | Recipes in other folders may no longer be safe to run. |
| Etch of chromium and silicon nitrides | Recipes for etching chromium and silicon nitrides have been developed. | Etching the two materials is only allowed for processes in combination with other Pegasus 2 specific recipes such as the CORE recipe. Always consult with Nanolab staff. |
| Electrostatic clamping, chip bonding with Galden oil and helium backside cooling are no longer being used. | The processes run in Pegasus 2 operate at such low powers that they do not require very efficient cooling. It has therefore been decided that
|
So far we have not seen any changes in the results but if you do, please contact Nanolab staff. |
| Background knowledge required for safe operation | The users and supervisors of Pegasus-2 must carefully read the 4 papers listed in the comments in order to have a correct understanding of the etch process and experimental procedure and how it relates to the Bosch etch performance. | See the papers in the section below. |
| List of approved recipes | The list of currently approved recipes is: |
Configuration and setup valid September 13 2021 to May 25 2022
| Item | The currently applied modification | Comments |
|---|---|---|
| Available gasses and gas chemistry | Available gasses:
Not available:
|
OnlySF6 and O2 are used for Si, PR, and Cr etch. The rest is only make-up |
| Plasma source heaters | Applies to
|
The temperature on the heaters in the plasma source are set to 20 degrees with a high tolerance. This essentially corresponds to powered off compared to default Pegasus temperatures which are in the 120-140 degrees range.
Always make sure that the temperature settings in the recipes are not enabled. Click here to have more information. |
| RF power and pressure settings | All recipes run without coil power, very low platen power and low pressures | None of the recipes use coil power in order to prevent aluminium fluoride formation at the aluminium oxide dome. These particles may drop on the wafer or chuck and cause abnormalitites.
Most of the recipes rely on very low pressure and low power - 0.2 mTorr and 10 Watt platen power is not an error and easily supports the plasma. |
| Carbon free plasmas | The process chamber does not have any carbon containing etch gasses. Therefore, polymer build-up on the chamber walls is not an issue. The 'carbon free' policy does not, however, apply to the choice of masking materials and CSAR, AZ and DUV resists are allowed. | |
| Chamber conditioning and cleaning | Running long oxygen cleans is not necessary and must be avoided. Neither are shorter cleans between wafers. | The absence of carbon containing etch gasses ensures that the process chamber is kept clean. |
| Approved recipes | The 'std' folder holds the list of currently allowed recipes | Recipes in other folders may no longer be safe to run. |
| Etch of nickel and chromium | Recipes for etching nickel and chromium have been developed | The cross contamination consequences have yet to be determined |
| Background knowledge required for safe operation | The users and supervisors of Pegasus-2 must carefully read the 4 papers listed in the comments in order to have a correct understanding of the etch process and experimental procedure and how it relates to the Bosch etch performance. | See the papers in the section below. |
| List of approved recipes | The list of currently approved recipes is: |
Configuration and setup valid August 17 2021 to September 13 2021
| Item | The currently applied modification | Comments |
|---|---|---|
| Available gasses and gas chemistry | Available gasses:
Not available:
|
OnlySF6 and O2 are used for Si, PR, and Cr etch. The rest is only make-up |
| Plasma source heaters | Applies to
|
The temperature on the heaters in the plasma source are set to 20 degrees with a high tolerance. This essentially corresponds to powered off compared to default Pegasus temperatures which are in the 120-140 degrees range.
Always make sure that the temperature settings in the recipes are not enabled. Click here to have more information. |
| RF power and pressure settings | All recipes run without coil power, very low platen power and low pressures | None of the recipes use coil power in order to prevent aluminium fluoride formation at the aluminium oxide dome. These particles may drop on the wafer or chuck and cause abnormalitites.
Most of the recipes rely on very low pressure and low power - 0.2 mTorr and 10 Watt platen power is not an error and easily supports the plasma. |
| Carbon free plasmas | The process chamber does not have any carbon containing etch gasses. Therefore, polymer build-up on the chamber walls is not an issue. The 'carbon free' policy does not, however, apply to the choice of masking materials and CSAR, AZ and DUV resists are allowed. | |
| Chamber conditioning and cleaning | Running long oxygen cleans is not necessary and must be avoided. Neither are shorter cleans between wafers. | The absence of carbon containing etch gasses ensures that the process chamber is kept clean. |
| Approved recipes | The 'std' folder holds the list of currently allowed recipes | Recipes in other folders may no longer be safe to run. |
| Etch of nickel and chromium | Recipes for etching nickel and chromium have been developed | The cross contamination consequences have yet to be determined |
| Background knowledge required for safe operation | The users and supervisors of Pegasus-2 must carefully read the 4 papers listed in the comments in order to have a correct understanding of the etch process and experimental procedure and how it relates to the Bosch etch performance. | See the papers in the section below. |
Configuration and setup valid March 2021 to August 2021
| Item | The currently applied modification | Comments |
|---|---|---|
| Available gasses and gas chemistry | Available gasses:
Not available:
|
OnlySF6 and O2 are used for Si, PR, and Cr etch. The rest is only make-up |
| Plasma source heaters | Applies to
|
The temperature on the heaters in the plasma source are set to 20 degrees with a high tolerance. This essentially corresponds to powered off compared to default Pegasus temperatures which are in the 120-140 degrees range.
Always make sure that the temperature settings in the recipes are not enabled. Click here to have more information. |
| RF power and pressure settings | All recipes run without coil power, very low platen power and low pressures | None of the recipes use coil power in order to prevent aluminium fluoride formation at the aluminium oxide dome. These particles may drop on the wafer or chuck and cause abnormalitites.
Most of the recipes rely on very low pressure and low power - 0.2 mTorr and 10 Watt platen power is not an error and easily supports the plasma. |
| Carbon free plasmas | The process chamber does not have any carbon containing etch gasses. Therefore, polymer build-up on the chamber walls is not an issue. The 'carbon free' policy does not, however, apply to the choice of masking materials and CSAR, AZ and DUV resists are allowed. | |
| Chamber conditioning and cleaning | Running long oxygen cleans is not necessary and must be avoided. Neither are shorter cleans between wafers. | The absence of carbon containing etch gasses ensures that the process chamber is kept clean. |
| Approved recipes | The 'std' folder holds the list of currently allowed recipes | Recipes in other folders may no longer be safe to run. |
| Etch of nickel and chromium | Recipes for etching nickel and chromium have been developed | The cross contamination consequences have yet to be determined |
| Background knowledge required for safe operation | Users and supervisors of Pegasus-2 should carefully read the 3 papers listed in the comments in order to have a correct understanding of the etch process and experimental procedure and how it relates to the Bosch etch performance. | See the papers in the section below. |
Configuration and setup valid November 2020 to March 2021
| Item | The currently applied modification | Comments |
|---|---|---|
| Available gasses and gas chemistry | Available gasses:
Not available:
|
OnlySF6 and O2 are used for Si, PR, and Cr etch. The rest is only make-up |
| Plasma source heaters | Applies to
|
The temperature on the heaters in the plasma source are set to 20 degrees with a high tolerance. This essentially corresponds to powered off compared to default Pegasus temperatures which are in the 120-140 degrees range.
Always make sure that the temperature settings in the recipes are not enabled. Click here to have more information. |
| RF power and pressure settings | All recipes run without coil power, very low platen power and low pressures | None of the recipes use coil power in order to prevent aluminium fluoride formation at the aluminium oxide dome. These particles may drop on the wafer or chuck and cause abnormalitites.
Most of the recipes rely on very low pressure and low power - 0.2 mTorr and 10 Watt platen power is not an error and easily supports the plasma. |
| Carbon free plasmas | The process chamber does not have any carbon containing etch gasses. Therefore, polymer build-up on the chamber walls is not an issue. The 'carbon free' policy does not, however, apply to the choice of masking materials and CSAR, AZ and DUV resists are allowed. | |
| Chamber conditioning and cleaning | Running long oxygen cleans is not necessary and must be avoided. Neither are shorter cleans between wafers. | The absence of carbon containing etch gasses ensures that the process chamber is kept clean. |
| Approved recipes | The 'std' folder holds the list of currently allowed recipes | Recipes in other folders may no longer be safe to run. |
| Etch of nickel and chromium | Recipes for etching nickel and chromium have been developed | The cross contamination consequences have yet to be determined |
As of December 2020 there is not yet any old configurations.
Publications on the CORE process
- Nguyen, V. T. et al.
- On the formation of black silicon in SF6-O2 plasma: The clear, oxidize, remove, and etch (CORE) sequence and black silicon on demand
- 2020 Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, 38(4), [043004].
- https://doi.org/10.1116/6.0000196
- Vy Thi Hoang Nguyen et al.
- The CORE Sequence: A Nanoscale Fluorocarbon-Free Silicon Plasma Etch Process Based on SF6/O2 Cycles with Excellent 3D Profile Control at Room Temperature
- 2020 ECS J. Solid State Sci. Technol. 9 024002
- https://doi.org/10.1149/2162-8777/ab61ed
- Vy Thi Hoang Nguyen et al.
- Ultrahigh aspect ratio etching of silicon in SF6-O2 plasma: The clear-oxidize-remove etch (CORE) sequence and chromium mask
- 2020 Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, 38(5), [053002]
- https://doi.org/10.1116/6.0000357
- Vy Thi Hoang Nguyen et al.
- Cr and CrOx etching using SF6 and O2 plasma
- 2021 Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics, 39(3), [032201]
- https://doi.org/10.1116/6.0000922