Specific Process Knowledge/Bonding: Difference between revisions

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== Choose bonding method ==
'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Bonding click here]'''


*Eutectic bonding
'''Unless anything else is stated, everything on this page, text and pictures are made by DTU Nanolab.'''
*Fusion bonding
*Anodic bonding


===Comparing the three bonding methods===
For bonding samples to a carrier wafer in order to enable '''dry etching''', please go [[Specific_Process_Knowledge/Etch/DryEtchProcessing/Bonding|here]].
{| border="2" cellspacing="0" cellpadding="4" align="center"
 
!.
For bonding samples to a carrier wafer for '''UV-lithography''' using automatic coater and developer, please see this process flow: [[media:Process_Flow_ChipOnCarrier.docx‎|Process_Flow_ChipOnCarrier.docx‎]], and refer to the [[Specific_Process_Knowledge/Etch/DryEtchProcessing/Bonding#Bonding|bonding procedure]] for dry etching.
!Eutectic bonding
 
!Fusion bonding
== Choose equipment ==
!Anodic bonding
*[[/Imprinter 02|Imprinter 02]]
|- valign="top"
*[[/Wafer Bonder 02|Wafer Bonder 02]]
|'''General description'''
*[[Specific Process Knowledge/Thermal Process/C3 Anneal-bond furnace|C3 furnace anneal bond]]
|For bonding two substrates by use of an interphase that makes an eutecticum.
 
|For bonding two identical materials.
== Choose bonding methods in Wafer Bonder 2 ==
|For bonding Si and Glass.
 
|-valign="top"
*[[/Eutectic bonding|Eutectic bonding]]
|'''Bonding temperature'''
*[[/Fusion bonding|Fusion bonding]]
|Depending on the eutecticum 310<math>^o</math>C to 400<math>^o</math>C.
*[[/Anodic bonding|Anodic bonding]]
|Depending on defects 50<math>^o</math>C to 400<math>^o</math>C.
 
|Depending on the voltage 300<math>^o</math>C to 500<math>^o</math>C Standard is 400<math>^o</math>C.
== Comparing the three bonding methods in the wafer bonder 2 ==
|-valign="top"
 
|'''Annnealing temperature'''
{| border="2" cellspacing="0" cellpadding="2"  
 
|-style="background:silver; color:black"
!
![[/Eutectic bonding|Eutectic bonding]]
![[/Fusion bonding|Fusion bonding]]
![[/Anodic bonding|Anodic bonding]]
|-
 
|-style="background:WhiteSmoke; color:black"
!General description
|For bonding two substrates by use of an interphase that makes an eutecticum.  
|For bonding two identical materials.
|For bonding Si and Glass.  
|-
 
|-style="background:silver; color:black"
!Bonding temperature
|Depending on the eutecticum 310°C to 400°C.  
|Depending on defects 50°C to 400°C.
|Depending on the voltage 300°C to 500°C Standard is 400°C.  
|-
 
|-style="background:WhiteSmoke; color:black"
!Annealing temperature
|No annealing
|1000°C-1100°C in the anneal bond furnace (C3).
|No annealing
|No annealing
|1000<math>^o</math>C in the bond furnace C3
|-
|No annealing
 
|-valign="top"
|-style="background:silver; color:black"
|'''Materials possible to bond'''
!Materials possible to bond
|Bonding of primarely Si is done by use of the eutectica Au/Si, Au/Sn and Ni/Si
|Bonding of substrates is done by use of the eutectica Au/Si, Au/Sn and Au/Sn/Ni  
|Si/Si, SiO<math>_2</math>/SiO<math>_2</math>
|Si/Si, SiO2/SiO2
|Si/Pyrex (glass)
|Si/Pyrex (glass)  
|-valign="top"
|-
|'''Substrate size'''
|Up to 6"
|Up to 6"
|Up to 6"
|-valign="top"
|'''Resolution z'''
|1Å or 25Å
|1Å, 10Å or 20Å
|<1Å - accuracy better than 2%
|- valign="top"
|'''Max. scan depth [µm] (as a function of trench width W''')
|0.87(W[µm]-5µm)
|1.2(W[µm]-5µm)
|~1 with standard cantilever.
|-valign="top"
|'''Tip radius'''
|5 µm 60<sup>o</sup> cone
|5 µm 45<sup>o</sup> cone
|<12 nm on standard cantilever
|-valign="top"
|'''Stress measurement'''
|Can be done
|Can be done
|Cannot be done
|-valign="top"
|'''Surface roughness'''
|Can be done on a line scan
|Can be done on a line scan
|Can be done on a selected surface area
|-
|}


|-style="background:WhiteSmoke; color:black"
!Substrate size
|Up to 4" 
|Up to 4" 
|Up to 4" 
|-


|-style="background:silver; color:black"
!Cleaning
|Cleaning by N2.
|Wet chemical cleaning, [[Specific Process Knowledge/Wafer cleaning/IMEC|IMEC]].
|Cleaning by N2. 
|-


|-style="background:WhiteSmoke; color:black"
!Backside alignment
|Double side polished wafers.
|Double side polished wafers.
|Not relevant. 
|-


== Choose equipment ==
<br clear="all" />
*Speedline manual spinner - ''For spinning of PMMA and Topas''

Latest revision as of 08:18, 6 February 2023

Feedback to this page: click here

Unless anything else is stated, everything on this page, text and pictures are made by DTU Nanolab.

For bonding samples to a carrier wafer in order to enable dry etching, please go here.

For bonding samples to a carrier wafer for UV-lithography using automatic coater and developer, please see this process flow: Process_Flow_ChipOnCarrier.docx‎, and refer to the bonding procedure for dry etching.

Choose equipment

Choose bonding methods in Wafer Bonder 2

Comparing the three bonding methods in the wafer bonder 2


Eutectic bonding Fusion bonding Anodic bonding
General description For bonding two substrates by use of an interphase that makes an eutecticum. For bonding two identical materials. For bonding Si and Glass.
Bonding temperature Depending on the eutecticum 310°C to 400°C. Depending on defects 50°C to 400°C. Depending on the voltage 300°C to 500°C Standard is 400°C.
Annealing temperature No annealing 1000°C-1100°C in the anneal bond furnace (C3). No annealing
Materials possible to bond Bonding of substrates is done by use of the eutectica Au/Si, Au/Sn and Au/Sn/Ni Si/Si, SiO2/SiO2 Si/Pyrex (glass)
Substrate size Up to 4" Up to 4" Up to 4"
Cleaning Cleaning by N2. Wet chemical cleaning, IMEC. Cleaning by N2.
Backside alignment Double side polished wafers. Double side polished wafers. Not relevant.
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