Specific Process Knowledge/Thermal Process/A4 Phosphor Pre-dep furnace

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A4 Furnace Phosphor Pre-dep

A4 Phosphor Pre-dep furnace. Positioned in cleanroom 2

The A4 Phosphor pre-dep furnace is used to dope Si wafers with phosphorus to make conductive structures, etch stop layers etc. The doping source is phosphoryl chloride (commonly called phosphorus oxychloride) which is a colourless liquid with the formula POCl3.

A4 is the lowest furnace tube in the A-stack positioned in cleanroom 2. The A-stack together with the C2 Gate Oxide furnace are the cleanest of all furnaces in the cleanroom. Please be aware of which substrates are allowed to enter this furnace. Check the cross contamination chart.

The user manual, technical information and contact information can be found in LabManager:

Furnace A4: Phosphor Pre-dep

Process knowledge

Overview of the performance of the Phosphor pre-dep furnace and some process related parameters

Purpose Doping of Phosphor
Performance
  • Look at Process knowladge
Process parameter range Process Temperature
  • 900-1150 oC
Process pressure
  • 1 atm
Gasses on the system
  • POCl3, N2
Substrates Batch size
  • 1-30 4" wafer (or 2" wafers) per run
Substrate material allowed
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