Specific Process Knowledge/Thermal Process/A4 Phosphor Pre-dep furnace
A4 Furnace Phosphor pre-dep
The A4 Furnace Phosphor pre-dep is used to dope Si wafers with Phosphor to make conductive structures, etch stop layers etc. The doping source is Phosphoryl chloride (commonly called phosphorus oxychloride) that is a colourless liquid with the formula POCl3.
A4 is the lowest furnace tube in the A-stack positioned in cleanroom 2. The A-stack together with the C2 Furnace Gate oxide are the cleanest of all furnaces in the cleanroom. Please be aware of which substrates are allowed to enter this furnace. Check the cross contamination chart.
The user manual, technical information and contact information can be found in LabManager:
Process knowledge
Purpose | Doping of Phosphor | |
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Performance |
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Process parameter range | Process Temperature |
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Process pressure |
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Gasses on the system |
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Substrates | Batch size |
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Substrate material allowed |
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