Specific Process Knowledge/Etch/Etching of Silicon Oxide/SiO2 etch using ASE/tests CHF3+H2
< Specific Process Knowledge | Etch | Etching of Silicon Oxide | SiO2 etch using ASE
Jump to navigation
Jump to search
Revision as of 11:40, 14 December 2023 by Mfarin (talk | contribs) (Created page with "===Recipes and results - <span style="background:#FFD850">CHF<sub>3</sub> tests=== {| border="1" cellspacing="1" cellpadding="1" align="left" ! '''Recipe''' ! '''Recipe parameters''' ! '''Process time''' ! '''Date''' ! '''SEM picture''' ! '''SEM pic w/ no resist''' ! '''Redeposition - top view''' ! '''Profile angles''' ! '''Etch rate in SiO2''' ! '''Etch rate in resist <br> (AZ5214E inverse)''' ! '''Selectivity <br> (SiO2:resist)''' ! '''Etch rate in Si''' |- |- |-sty...")
Recipes and results - CHF3 tests
| Recipe | Recipe parameters | Process time | Date | SEM picture | SEM pic w/ no resist | Redeposition - top view | Profile angles | Etch rate in SiO2 | Etch rate in resist (AZ5214E inverse) |
Selectivity (SiO2:resist) |
Etch rate in Si |
|---|---|---|---|---|---|---|---|---|---|---|---|
| CHF3_t1 | CHF3= 22.5 sccm Coil= 800W Platen= 15W Press= 2.5mTorr Temp= 20°C |
12:00 min | 04/09/2023 | 
|
|
69.7 nm/min +/- 10.5% |
57.3 nm/min +/- 12.9% |
1.22 | |||
| CHF3_t2 | CHF3= 22.5 sccm Coil= 150W Platen= 25W Press= 2.5mTorr Temp= 20°C |
25:00 min | 04/09/2023 | 
|
|
|
26.7 nm/min +/- 11.9% |
24.2 nm/min +/- 21.1% |
1.1 | ||
| CHF3 t2 | CHF3= 22.5 sccm H2= 22.5 sccm Coil= 150W Platen= 25W Press= 2.5mTorr Temp= 20°C |
10:00 min | 22/09/2023 | 
|
|
|
9,7 nm/min +/- 34.4% |
1,8 nm/min +/- 46.5% |
5.4 | ||
| CHF3_t1 | CHF3= 22.5 sccm H2= 10 sccm Coil= 800W Platen= 15W Press= 2.5mTorr Temp= 20°C |
10:00 min | 12/09/2023 | 
|
|
|
59,6 nm/min +/- 12.9% |
47,5 nm/min +/- 21.5% |
1.25 | ||
| CHF3_t1 | CHF3= 22.5 sccm O2= 10 sccm Coil= 800W Platen= 15W Press= 2.5mTorr Temp= 20°C |
10:00 min | 11/09/2023 | 
|
|
|
60,6 nm/min +/- 10.1% |
130,8 nm/min +/- 8.8% |
0.46 | ||
| CHF3 t1 | CHF3= 22.5 sccm H2= 22.5 sccm Coil= 800W Platen= 15W Press= 2.5mTorr Temp= 20°C |
10:00 min | 20/09/2023 | 
|
|
|
47,3 nm/min +/- 12% |
26,4 nm/min +/- 17,4% |
1.8 | ||
| CHF3 t1 | CHF3= 22.5 sccm H2= 35 sccm Coil= 800W Platen= 15W Press= 2.5mTorr Temp= 20°C |
10:00 min | 22/09/2023 | 
|
|
|
36,5 nm/min +/- 10.6% |
17,5 nm/min +/- 13.9% |
2.09 | ||
| CHF3 t1 | CHF3= 35 sccm H2= 35 sccm Coil= 800W Platen= 15W Press= 2.5mTorr Temp= 20°C |
10:00 min | 22/09/2023 | 
|
|
|
42 nm/min +/- 15.4% |
23,8 nm/min +/- 22.2% |
1.76 | ||
| CHF3 t1 | CHF3= 22.5 sccm CF4= 22.5 sccm Coil= 800W Platen= 15W Press= 2.5mTorr Temp= 20°C |
10:00 min | 22/09/2023 | 
|
|
|
75,8 nm/min +/- 13.1% |
74,9 nm/min +/- 10.8% |
1.01 | ||
| CHF3 t1 | CHF3= 22.5 sccm H2= 22.5 sccm Coil= 800W Platen= 15W Press= 25mTorr Temp= 20°C |
10:00 min | 22/09/2023 | 
|
|
|
- | - | no etch done, polymer deposited |
||
| CHF3 t1 | CHF3= 22.5 sccm H2= 22.5 sccm Coil= 800W Platen= 15W Press= 2.5mTorr Temp= 0°C |
10:00 min | 22/09/2023 | 
|
|
|
48 nm/min +/- 11.2% |
23,3 nm/min +/- 13.7% |
2.06 |