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Plan for test runs on PECVD4 before release
Test of standard recipes, dep. rate, RI and stress
|
Recipe
|
Wafer ID
|
Dep. rate [nm/min]
|
RI
|
Unif. [%]
|
Stress
|
Comments
|
SiH4
|
NH3
|
N2O
|
N2
|
B2H6
|
PH3
|
Pressure
|
APC
|
Power
|
Load
|
Tune
|
Temp
|
Time
|
PREDEP
|
s000008
|
377 nm/min
|
1.489
|
±3.1%
|
|
|
50
|
|
1800
|
|
|
|
650
|
|
200LF
|
~10
|
~53
|
250/300
|
04:00
|
LFSIO
|
s000009
|
92 nm/min
|
1.480
|
±1.9%
|
|
Without carrier
|
12
|
|
1420
|
392
|
|
|
550
|
|
60LF
|
~10
|
~53
|
2250/300
|
01:15
|
LFSIO
|
s000011
|
78 nm/min
|
1.483
|
±2.1%
|
|
With carrier
|
12
|
|
1420
|
392
|
|
|
550
|
|
60LF
|
~10
|
~53
|
2250/300
|
01:15
|
HFSiO
|
s000012
|
64 nm/min
|
1.477
|
±0.5%
|
|
with carrier
|
10
|
|
1420
|
392
|
|
|
900
|
|
30HF
|
~55
|
~58
|
250/300
|
02:00
|
LFSiN
|
s000013
|
43 nm/min
|
1.983
|
±4.4%
|
|
with carrier
|
40
|
20
|
|
1960
|
|
|
550
|
|
60LF
|
~10
|
~53
|
250/300
|
02:00
|
HFSiN
|
S000015
|
12.4 nm/min
|
2.017
|
±1.2%
|
|
With carrier
|
40
|
55
|
|
1960
|
|
|
900
|
|
20HF
|
~56
|
~58
|
250/300
|
10:00
|
MFSiN
|
S000016
|
46.8 nm/min
|
2.083
|
±3.3%
|
|
With carrier
|
40
|
40
|
|
1960
|
|
|
900
|
|
20HF 6"/20LF 2"
|
63/25
|
33auto/92man
|
250/300
|
10:00
|
LFSIO st
|
s000019
|
75.4
|
1.480
|
±2.7%
|
|
Stress test 1µm - stress wafer no. 1
|
12
|
|
1420
|
392
|
|
|
550
|
|
60LF
|
~10
|
~53
|
2250/300
|
13:00
|
HFSiO st
|
S000020
|
63.1
|
1.476
|
±0.3%
|
|
Stress test 1µm - stress wafer no. 2
|
10
|
|
1420
|
392
|
|
|
900
|
|
30HF
|
~55
|
~58
|
250/300
|
16:00
|
LFSiN st
|
S000021
|
40.4
|
1.984
|
±3.9%
|
|
Stress test 1µm
|
40
|
20
|
|
1960
|
|
|
550
|
|
60LF
|
~10
|
~53
|
250/300
|
23:00
|
HFSiN st
|
S000022
|
61.7
|
2.067
|
±4.0%
|
|
Stress test ~700nm
|
40
|
55
|
|
1960
|
|
|
900
|
|
20HF
|
~56
|
~58
|
250/300
|
56:00
|
MFSiN st
|
S000024
|
46.2
|
2.087
|
±3.6
|
|
Stress test ~700nm
|
40
|
40
|
|
1960
|
|
|
900
|
|
20HF 6"/20LF 2"
|
59/0
|
60auto/59man
|
250/300
|
14:56
|
Standard Waveguide
|
S000028
|
|
|
|
|
|
17
|
|
2000
|
|
|
|
300
|
|
700LF
|
~35
|
~40
|
250/300
|
40:00
|
D
|
|
D
|
D
|
D
|
D
|
D
|
D
|
D
|
D
|
D
|
D
|
D
|
D
|
D
|
D
|
D
|
D
|
D
|
D
|
D
|
|
D
|
D
|
D
|
D
|
D
|
D
|
D
|
D
|
D
|
D
|
D
|
D
|
D
|
D
|
D
|
D
|
D
|
D
|
Run-to-Run Reproducibility
Test of LFSiO at different chamber conditions
|
Recipe
|
Wafer ID
|
Dep. rate [Å/min]
|
RI
|
Unif. [%]
|
Comments
|
SiH4
|
NH3
|
N2O
|
N2
|
B2H6
|
PH3
|
Pressure
|
APC
|
Power
|
Load
|
Tune
|
Temp
|
Time
|
LFSIO
|
|
|
|
|
1000Å At 1µm chamber deposition
|
12
|
|
1420
|
392
|
|
|
550
|
|
60LF
|
~10
|
~53
|
2250/300
|
01:15
|
LFSIO
|
|
|
|
|
1000Å At 5.9µm chamber deposition
|
12
|
|
1420
|
392
|
|
|
550
|
|
60LF
|
~10
|
~53
|
2250/300
|
01:15
|