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Plan for test runs on PECVD4 before release

Recipe	Wafer ID	Dep. rate [nm/min]	RI	Unif. [%]	Stress	Comments	SiH4	NH3	N2O	N2	B2H6	PH3	Pressure	APC	Power	Load	Tune	Temp	Time
Test of standard recipes, dep. rate, RI and stress
PREDEP	s000008	377 nm/min	1.489	±3.1%			50		1800				650		200LF	~10	~53	250/300	04:00
LFSIO	s000009	92 nm/min	1.480	±1.9%		Without carrier	12		1420	392			550		60LF	~10	~53	2250/300	01:15
LFSIO	s000011	78 nm/min	1.483	±2.1%		With carrier	12		1420	392			550		60LF	~10	~53	2250/300	01:15
HFSiO	s000012	64 nm/min	1.477	±0.5%		with carrier	10		1420	392			900		30HF	~55	~58	250/300	02:00
LFSiN	s000013	43 nm/min	1.983	±4.4%		with carrier	40	20		1960			550		60LF	~10	~53	250/300	02:00
HFSiN	S000015	12.4 nm/min	2.017	±1.2%		With carrier	40	55		1960			900		20HF	~56	~58	250/300	10:00
MFSiN	S000016	46.8 nm/min	2.083	±3.3%		With carrier	40	40		1960			900		20HF 6"/20LF 2"	63/25	33auto/92man	250/300	10:00
LFSIO st	s000019	75.4				Stress test 1µm - stress wafer no. 1	12		1420	392			550		60LF	~10	~53	2250/300	13:00
HFSiO st	S000020					Stress test 1µm - stress wafer no. 2	10		1420	392			900		30HF	~55	~58	250/300	16:00
LFSiN st	S000021					Stress test 1µm	40	20		1960			550		60LF	~10	~53	250/300	23:00
HFSiN st	S000022					Stress test ~700nm	40	55		1960			900		20HF	~56	~58	250/300	56:00
MFSiN st	S000024					Stress test ~700nm	40	40		1960			900		20HF 6"/20LF 2"	59/0	60auto/59man	250/300	14:56
Standard Waveguide							17		2000				300		700LF	~35	~40	250/300	40:00
D		D	D	D	D	D	D	D	D	D	D	D	D	D	D	D	D	D	D
D		D	D	D	D	D	D	D	D	D	D	D	D	D	D	D	D	D	D

Recipe	Comments	SiH4	N2O	N2	Pressure	Power	Load	Tune	Temp	Time
Test of LFSiO at different chamber conditions
LFSIO	1000Å At 1µm chamber deposition	12	1420	392	550	60LF	~10	~53	2250/300	01:15
LFSIO	1000Å At 5.9µm chamber deposition	12	1420	392	550	60LF	~10	~53	2250/300	01:15