Specific Process Knowledge/Thin film deposition/PECVD
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PECVD Plasma Enhanced Chemical Vapor Deposition
We have two PECVD's here at DANCHIP. They can all be used to deposit Silicon oxides and Silicon nitrides with or without dopants of Boron, Phosphorus and Germanium. PECVD3 is used for silicon based processing with small amounts (<5% wafer coverage) of metals where as PECVD2 is dedicated for clean wafers both for silicon based materials and III-V materials. Quartz carriers are used in PECVD2 and they are dedicated the two different material groups to avoid cross contamination. See the precise rules in the equipment manuals which are uploaded in LabManager.
PECVD is a chemical vapor deposition process that applies a plasma to enhance chemical reaction rates of reactive spices. PECVD processing allows deposition at lower temperatures, which is often critical in the manufacture of semiconductors.
All though PECVD2 and 3 are very similar you should not expect to transfer a recipe between the systems and get the exact same result.
Recipes on PECVD1(will be removed soon), PECVD2 and PECVD3
- Recipes for PECVD2 are in the III-V entry in LAbAdviser, see here
- Recipes on PECVD3 for deposition of silicon oxides
- Recipes on PECVD3 for deposition of silicon nitride and silicon oxynitride
- Recipes on PECVD1 for deposition of silicon oxide: Expired!
- Recipes on PECVD1 for deposition of silicon nitride and silicon oxynitride: Expired!
PECVD | PECVD2 | PECVD3 | |
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Purpose | Deposition of dielectrica |
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Performance | Film thickness |
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Index of refraction |
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Step coverage |
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Film quality |
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Process parameter range | Process Temperature |
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Process pressure |
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Gas flows |
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Substrates | Batch size |
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Materials allowed |
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