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Comparing lithography methods at DTU Danchip

	UV Lithography	DUV Stepper Lithography	E-beam Lithography	Nano Imprint Lithography	2-Photon Polymerization Lithography
Generel description	Pattern transfer via UltraViolet (UV) light	Pattern transfer via DeepUltraViolet (DUV) light	Patterning by electron beam	Pattern transfer via hot embossing(HE)	Direct writing via IR laser
Pattern size range	~1.25 µm and up	~200 nm and up	~12 nm - 1 µm	~20 nm and up	3D voxel through transparent substrate: 0.3 µm diameter; 0.6 µm high 2D spot on opaque substrate: 0.6 µm diameter
Resist type	UV sensitive: AZ 5214E, AZ 4562, AZ MiR 701 (positive) AZ 5214E, AZ nLOF 2020, SU-8 (negative)	DUV sensitive JSR KRF M230Y, JSR KRF M35G (positive) UVN2300-0.8 (negative)	E-beam sensitive AR-P6200 CSAR, ZEP502A , PMMA, HSQ, mr-EBL, AR-N 7520	Imprint polymers: Topas PMMA	UV sensitive: IP photoresists, SU-8 (3D) AZ resists (2D)
Resist thickness range	~0.5µm to 20µm	~50nm to 2µm	~30nm to 0.5 µm	~ 100nm to 2µm	droplet or coating
Typical exposure time	2s-30s pr. wafer	Process depended, depends on pattern, pattern area and dose	Depends on dose, Q [µC/cm2], beam current, I [A], and pattern area, A [cm2]: t = Q*A/I	Process depended, depends also on heating and cooling temperature rates	Process depended, depends on pattern and dose
Substrate size	small samples 50 mm wafers 100 mm wafers 150 mm wafers	100 mm wafers 150 mm wafers 200 mm wafers	We have cassettes that fit to 4 small samples (20mm, 12mm, 8mm, 4mm) 6 wafers of 50 mm in size 2 wafers of 100 mm in size 1 wafer of 150 mm in size Only one cassette can be loaded at time	small samples 50 mm wafers 100 mm wafers 150 mm wafers	Cover slides 50 mm wafers 100 mm wafers IBIDI
Allowed materials	Any standard cleanroom material	Any standard cleanroom material	Any standard cleanroom material	Any standard cleanroom material	Any standard cleanroom material