Specific Process Knowledge/Thin film deposition/PECVD: Difference between revisions

Revision as of 14:22, 3 December 2007

PECVD Plasma Enhanced Chemical Vapor Deposition

We have three PECVD's here at DANCHIP. They can all be used to deposit Silicon oxides and Silicon nitrides with or without dopants of Boron, Phosphorus and Germanium. PECVD1 and PECVD3 are used for silicon based processing where as PECVD2 is dedicated deposition on III-V materials. PECVD1 is the cleanest system where as PECVD3 is allowed to use with substrates with small abouts of metal on. See the precise rules in the equipment manuals which are uploaded in LabManager.

PECVD is a chemical vapor deposition process that applies a plasma to enhance chemical reaction rates of reactive spices. PECVD processing allows deposition at lower temperatures, which is often critical in the manufacture of semiconductors.

All though PECVD1, 2 and 3 are very similar you should not expect to transfer a recipe between the systems and get the same exact same result.

Recipes on PECVD1

Recipes on PECVD1 for deposition of silicon oxides

Recipes on PECVD3

Recipes on PECVD3 for deposition of silicon nitride and silicon oxynitride

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 == Recipes on PECVD1 ==
-[[Specific Process Knowledge/Thin film deposition/Deposition of Silicon Nitride/Deposition of Silicon Nitride using PECVD#Recipes on PECVD1 for deposition of silicon nitride and silicon oxynitride|Recipes on PECVD1 for deposition of silicon nitride and silicon oxynitride]]
+[[Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide/Deposition of Silicon Oxide using PECVD#Recipes on PECVD1 for deposition of silicon oxides|Recipes on PECVD1 for deposition of silicon oxides]]
 ==Recipes on PECVD3 ==
 [[Specific Process Knowledge/Thin film deposition/Deposition of Silicon Nitride/Deposition of Silicon Nitride using PECVD#Recipes on PECVD3 for deposition of silicon nitride and silicon oxynitride|Recipes on PECVD3 for deposition of silicon nitride and silicon oxynitride]]