Specific Process Knowledge/Lithography: Difference between revisions
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'''<big>Spin Coating</big>''' | '''<big>Spin Coating</big>''' | ||
*[[Specific Process Knowledge/Lithography/Pretreatment#HMDS|HMDS]] | *[[Specific Process Knowledge/Lithography/Pretreatment#HMDS|HMDS]] | ||
'''<big>UV Exposure</big>''' | '''<big>UV Exposure</big>''' | ||
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'''<big>Electron Beam Exposure</big>''' | '''<big>Electron Beam Exposure</big>''' | ||
*[[Specific Process Knowledge/Lithography/Pretreatment#HMDS|HMDS]] | *[[Specific Process Knowledge/Lithography/Pretreatment#HMDS|HMDS]] | ||
'''<big>Deep-UV Exposure</big>''' | '''<big>Deep-UV Exposure</big>''' | ||
*[[Specific Process Knowledge/Lithography/Pretreatment#HMDS|HMDS]] | *[[Specific Process Knowledge/Lithography/Pretreatment#HMDS|HMDS]] | ||
'''<big>Development</big>''' | '''<big>Development</big>''' | ||
*[[Specific Process Knowledge/Lithography/Pretreatment#HMDS|HMDS]] | *[[Specific Process Knowledge/Lithography/Pretreatment#HMDS|HMDS]] | ||
'''<big>Post Processing</big>''' | '''<big>Post Processing</big>''' | ||
*[[Specific Process Knowledge/Lithography/Pretreatment#HMDS|HMDS]] | *[[Specific Process Knowledge/Lithography/Pretreatment#HMDS|HMDS]] | ||
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'''<big>UV Resists</big>''' | '''<big>UV Resists</big>''' | ||
*[[Specific Process Knowledge/Lithography/Pretreatment#HMDS|HMDS]] | *[[Specific Process Knowledge/Lithography/Pretreatment#HMDS|HMDS]] | ||
'''<big>OM Inspection</big>''' | '''<big>OM Inspection</big>''' |
Revision as of 10:47, 29 January 2016
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Comparing lithography methods at DTU Danchip
UV Lithography | DUV Stepper Lithography | E-beam Lithography | Nano Imprint Lithography | 2-Photon Polymerization Lithography | |
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Generel description | Pattern transfer via UltraViolet (UV) light | Pattern transfer via DeepUltraViolet (DUV) light | Patterning by electron beam | Pattern transfer via hot embossing(HE) | Direct writing via IR laser |
Pattern size range |
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Resist type |
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Resist thickness range |
~0.5µm to 20µm |
~50nm to 2µm |
~30nm to 0.5 µm |
~ 100nm to 2µm |
droplet or coating |
Typical exposure time |
2s-30s pr. wafer |
Process depended, depends on pattern, pattern area and dose |
Depends on dose, Q [µC/cm2], beam current, I [A], and pattern area, A [cm2]: t = Q*A/I |
Process depended, depends also on heating and cooling temperature rates |
Process depended, depends on pattern and dose |
Substrate size |
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We have cassettes that fit to
Only one cassette can be loaded at time |
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Allowed materials |
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Equipment Pages
3D Lithography |
Training
THIS SECTION IS UNDER CONSTRUCTION
Literature
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UV Resists
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