Specific Process Knowledge/Thin film deposition/Deposition of Silicon Nitride: Difference between revisions
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==Deposition of Silicon Nitride using PECVD== | ==Deposition of Silicon Nitride using PECVD== | ||
PECVD nitride and oxynitride can be deposited in one of the [[Specific Process Knowledge/Thin film deposition/PECVD|PECVD]] systems. You can run 1-3 wafers at a time depending on which one of the PECVD's you use. The deposition takes place at 300 degrees Celcius. This can be | PECVD nitride and oxynitride can be deposited in one of the [[Specific Process Knowledge/Thin film deposition/PECVD|PECVD]] systems. You can run 1-3 wafers at a time depending on which one of the PECVD's you use. The deposition takes place at 300 degrees Celcius. This can be of importance for some applications but it gives a less dense film and the stoichiometry is on the following form: Si<sub>x</sub>N<sub>y</sub>H<sub>z</sub>. The step coverage and thickness uniformity of the film is not as good as for the LPCVD nitride. In one of our PECVD systems (PECVD3) we allow small amounts of metal on the wafers entering the system, this is not allowed in the LPCVD and in the other PECVD (PECVD1). | ||
==Comparison of LPCVD and PECVD for silicon nitride deposition== | ==Comparison of LPCVD and PECVD for silicon nitride deposition== |
Revision as of 13:45, 29 October 2007
Deposition of Silicon Nitride can be done with either LPCVD or PECVD.
Deposition of Silicon Nitride using LPCVD
LPCVD nitride can be made in the LPCVD nitride furnace. It is a batch process meaning you can run a batch of 25 wafers at a time. The deposition takes place at temperatures of 800-850 degrees Celsius. The LPCVD nitride has a good step coverage and the film thickness is very uniform over the wafer. We have two standard LPCVD nitride processes: One for depositing stoichiometric nitride (Si3N4) and one for deposition low stress nitride (SNR).
Deposition of Silicon Nitride using PECVD
PECVD nitride and oxynitride can be deposited in one of the PECVD systems. You can run 1-3 wafers at a time depending on which one of the PECVD's you use. The deposition takes place at 300 degrees Celcius. This can be of importance for some applications but it gives a less dense film and the stoichiometry is on the following form: SixNyHz. The step coverage and thickness uniformity of the film is not as good as for the LPCVD nitride. In one of our PECVD systems (PECVD3) we allow small amounts of metal on the wafers entering the system, this is not allowed in the LPCVD and in the other PECVD (PECVD1).
Comparison of LPCVD and PECVD for silicon nitride deposition
LPCVD | PECVD | |
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Stoichiometry |
SRN: Silicon rich nitride |
Can be doped with boron, phosphorus or germanium |
Film thickness |
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Process Temperature |
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Step coverage |
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Film quality |
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Process volume |
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Substrate material allowed |
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