Specific Process Knowledge/Thermal Process/BCB Curing Oven: Difference between revisions

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*Pyrolysis of different resist layers to form conductive structures
*BCB curing and metal alloying
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!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Process parameter range
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Process parameter range
|style="background:LightGrey; color:black"|Temperature
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*0-1000<sup>o</sup>C
*0 - 450<sup>o</sup>C
*Temperature ramp-up rate: Max 10<sup>o</sup>C/min
*Temperature ramp-down rate: Relative slow (depending on the furnace temperature)
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|style="background:LightGrey; color:black"|Nitrogen flows
|style="background:LightGrey; color:black"|Nitrogen flows
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*Flow 1: Max 660 liter/hour
*Low N<sub>2</sub> flow: 5 SLM
*Flow 2: Max 3500 liter/hour
*High N<sub>2</sub> flow: Max 16.7 SLM
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!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
|style="background:LightGrey; color:black"|Batch size
|style="background:LightGrey; color:black"|Batch size
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*Several small samples (placed on Si support wafers)
*Several small samples (placed on a carrier wafer)
*One-six 50 mm wafers (placed on Si support wafers)
*One 50 mm wafer (placed on a carrier wafers)
*One-six 100 mm wafers
*One 100 mm wafer
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| style="background:LightGrey; color:black"|Allowed materials
| style="background:LightGrey; color:black"|Allowed materials
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*BCB
*Co-polymer
*Silicon  
*Silicon  
*Silicon oxide
*Silicon oxide
*Silicon nitride
*Silicon nitride
*Quartz
*Quartz
*AZ resist (prebaked)
*Resist (prebaked)
*SU-8 (prebaked)
*III-V materials
*Metal
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Revision as of 10:47, 3 December 2012

This page is under contruction

BCB Curing Oven

The BCB Curing Oven is mainly used for curing of BCB (bisbenzocyclobutene) and for alloying of metal in a nitrogen atmosphere.

During processing the furnace is rapidly heated by use of five halogen lamps below the sample. The furnace is purged with a controlable nitrogen flow. There is vacuum on the furnace.

The user manual, user APV, technical information and contact information can be found in LabManager:

The BCB Curing Oven. Located in the III-V Lab

BCB Curing Oven

Process information

There are no standard processes on the furnace.

Equipment performance and process related parameters

Equipment Resist Pyrolysis Furnace
Purpose
  • BCB curing and metal alloying
Process parameter range Temperature
  • 0 - 450oC
Nitrogen flows
  • Low N2 flow: 5 SLM
  • High N2 flow: Max 16.7 SLM
Substrates Batch size
  • Several small samples (placed on a carrier wafer)
  • One 50 mm wafer (placed on a carrier wafers)
  • One 100 mm wafer
Allowed materials
  • BCB
  • Co-polymer
  • Silicon
  • Silicon oxide
  • Silicon nitride
  • Quartz
  • Resist (prebaked)
  • III-V materials
  • Metal
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