Specific Process Knowledge/Thermal Process/Resist Pyrolysis Furnace: Difference between revisions

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'''Feedback to this page''': '''[mailto:thinfilm@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Thermal_Process/Resist_Pyrolysis_Furnace click here]'''
''This page is written by DTU Nanolab  internal''
===<span style="color:Red">EXPIRED!
The Resist Pyrolysis furnace has been removed from the cleanroom August 2019. Use the Multipurpose Anneal furnace instead.</span>===
[[Category: Equipment |Thermal Resist Pyrolysis]]
[[Category: Thermal process|Resist Pyrolysis]]
[[Category: Furnaces|Resist Pyrolysis]]


== Resist Pyrolysis Furnace ==
== Resist Pyrolysis Furnace ==
 
[[image:Resist_Pyrolysis_Furnace.jpg|500x500px|right|thumb|The Resist Pyrolysis furnace located in cleanroom area A-5]]
'''Feedback to this page''': '''[mailto:thinfilm@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Thermal_Process/Resist_Pyrolysis_Furnace click here]'''


The Resist Pyrolysis Furnace is used for resist pyrolysis, where samples with different resist layers are heated up to maximum 1000 <sup>o</sup>C in a nitrogen atmosphere. At high temperatures carbon is formed by pyrolysis of the resist. In this way conductive structures can be made from a resist patterned sample.
The Resist Pyrolysis Furnace is used for resist pyrolysis, where samples with different resist layers are heated up to maximum 1000 <sup>o</sup>C in a nitrogen atmosphere. At high temperatures carbon is formed by pyrolysis of the resist. In this way conductive structures can be made from a resist patterned sample.
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If oxygen from the air or from outgassing of the resist is present in the furnace, the resist layer will be removed. Thus, for each process it is important to include a step with a high nitrogen flow at a lower temperature, before a high temperature for resist pyrolysis is obtained. Pyrolysis of a large amount of resist may also be a problem due to resist outgassing.  
If oxygen from the air or from outgassing of the resist is present in the furnace, the resist layer will be removed. Thus, for each process it is important to include a step with a high nitrogen flow at a lower temperature, before a high temperature for resist pyrolysis is obtained. Pyrolysis of a large amount of resist may also be a problem due to resist outgassing.  


During processing the furnace is rapidly heated by use of six long heating lamps situated around the furnace tube, and cooling is done (rather slowly) by use of cooling fans. The furnace is purged with a controlable nitrogen flow. There is no vacuum on the furnace.  
During processing the furnace is rapidly heated by use of six long heating lamps situated around the furnace tube. The furnace is not heated in the ends, and this affects the temperature uniformity in the furnace. Cooling is done (rather slowly) by use of cooling fans.  


'''The user manual, user APV, technical information and contact information can be found in LabManager:'''
The furnace is purged with a controlable nitrogen flow.


[[image:Resist_Pyrolysis_Furnace.jpg|400x400px|right|thumb|The Resist Pyrolysis furnace. Located in the III-V Lab]]
There is no vacuum on the furnace.  
 
 
'''The user manual, user APV and contact information can be found in LabManager:'''


[http://www.labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=294 Resist Pyrolysis Furnace]
[http://www.labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=294 Resist Pyrolysis Furnace]
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There are no standard processes on the furnace.
There are no standard processes on the furnace.
[[Image:section under construction.jpg|70px]]


==Equipment performance and process related parameters==
==Equipment performance and process related parameters==
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!colspan="2" border="none" style="background:silver; color:black;" align="center"|Equipment
!colspan="2" border="none" style="background:silver; color:black;" align="center"|Equipment
|style="background:WhiteSmoke; color:black"|<b>Resist Pyrolysis Furnace</b>
|style="background:WhiteSmoke; color:black"|<b>Reist Pyrolysis Furnace</b>
|-
|-
!style="background:silver; color:black;" align="center"|Purpose  
!style="background:silver; color:black;" align="center"|Purpose  
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*Pyrolysis of different resist layers to form conductive structures
*Pyrolysis of different resist layers to form conductive structures
|-
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Process parameter range
!style="background:silver; color:black" align="center" valign="center" rowspan="4"|Process parameter range
|style="background:LightGrey; color:black"|Temperature
|style="background:LightGrey; color:black"|Temperature
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*0-1000<sup>o</sup>C
*Max 1000 <sup>o</sup>C
*Temperature ramp-up rate: Max 10<sup>o</sup>C/min
*Temperature ramp-up rate: Max 10 <sup>o</sup>C/min
*Temperature ramp-down rate: Relative slow (depending on the furnace temperature)
*Temperature ramp-down rate: Relative slow (depending on the furnace temperature)
|-
|style="background:LightGrey; color:black"|Process gasses
|style="background:WhiteSmoke; color:black"|
*N<sub>2</sub>
|-
|style="background:LightGrey; color:black"|Vacuum
|style="background:WhiteSmoke; color:black"|
*No
|-
|-
|style="background:LightGrey; color:black"|Nitrogen flows
|style="background:LightGrey; color:black"|Nitrogen flows
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|style="background:LightGrey; color:black"|Batch size
|style="background:LightGrey; color:black"|Batch size
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Several small samples (placed on a Si support wafers)
*1-4 50 mm wafers (placed on Si carrier wafers)
*One-six 50 mm wafers (placed on a Si support wafers)
*1-5 100 mm wafers (place on Si carrier wafers or in a horizontal wafer boat)
*One-six 100 mm wafers
*Several smaller samples if these are placed on a support wafer
|-
|-
| style="background:LightGrey; color:black"|Allowed materials
| style="background:LightGrey; color:black"|Allowed materials
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*AZ resist (prebaked)
*AZ resist (prebaked)
*SU-8 (prebaked)
*SU-8 (prebaked)
*Other resist - Permission required
|-  
|-  
|}
|}

Latest revision as of 14:08, 6 February 2023

Feedback to this page: click here

This page is written by DTU Nanolab internal

===EXPIRED! The Resist Pyrolysis furnace has been removed from the cleanroom August 2019. Use the Multipurpose Anneal furnace instead.===

Resist Pyrolysis Furnace

The Resist Pyrolysis furnace located in cleanroom area A-5

The Resist Pyrolysis Furnace is used for resist pyrolysis, where samples with different resist layers are heated up to maximum 1000 oC in a nitrogen atmosphere. At high temperatures carbon is formed by pyrolysis of the resist. In this way conductive structures can be made from a resist patterned sample.

If oxygen from the air or from outgassing of the resist is present in the furnace, the resist layer will be removed. Thus, for each process it is important to include a step with a high nitrogen flow at a lower temperature, before a high temperature for resist pyrolysis is obtained. Pyrolysis of a large amount of resist may also be a problem due to resist outgassing.

During processing the furnace is rapidly heated by use of six long heating lamps situated around the furnace tube. The furnace is not heated in the ends, and this affects the temperature uniformity in the furnace. Cooling is done (rather slowly) by use of cooling fans.

The furnace is purged with a controlable nitrogen flow.

There is no vacuum on the furnace.


The user manual, user APV and contact information can be found in LabManager:

Resist Pyrolysis Furnace

Process information

There are no standard processes on the furnace.

Equipment performance and process related parameters

Equipment Reist Pyrolysis Furnace
Purpose
  • Pyrolysis of different resist layers to form conductive structures
Process parameter range Temperature
  • Max 1000 oC
  • Temperature ramp-up rate: Max 10 oC/min
  • Temperature ramp-down rate: Relative slow (depending on the furnace temperature)
Process gasses
  • N2
Vacuum
  • No
Nitrogen flows
  • Flow 1: Max 660 liter/hour
  • Flow 2: Max 3500 liter/hour
Substrates Batch size
  • 1-4 50 mm wafers (placed on Si carrier wafers)
  • 1-5 100 mm wafers (place on Si carrier wafers or in a horizontal wafer boat)
  • Several smaller samples if these are placed on a support wafer
Allowed materials
  • Silicon
  • Silicon oxide
  • Silicon nitride
  • Polysilicon
  • Quartz
  • AZ resist (prebaked)
  • SU-8 (prebaked)
  • Other resist - Permission required